G. Majni

Bio: G. Majni is an academic researcher. The author has contributed to research in topics: Germanium & Drift velocity. The author has an hindex of 8, co-authored 13 publications receiving 755 citations.

Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

Abstract: The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 102to 6 . 104V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.

Phase diagrams and metal‐rich silicide formation

Abstract: Phase formation at temperatures well below the melting point of the phases was studied in thin silicon–near‐noble‐metal films by means of 4He+ ion‐backscattering spectrometry and x‐ray diffractometry in SiO2/Si/M film systems, where the metal‐film thickness was larger than that of the Si film. In the initial stage of compound formation where both unreacted Si and M layers are present, the M2Si phase has been found. At increasing annealing times and temperatures, more and more metal‐rich phases have been detected. The Si‐Ni thin‐film system evolution follows exactly the phase diagram reported in the literature; moreover, for Ni, Pt, and Pd‐Si thin‐film interactions the end phases are dictated by the phase equilibrium and can be predicted by the phase diagrams.

Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectively

Abstract: 4He+ ions backscattering spectrometry and x-ray diffractometry were used to study interactions between PtSi and Pt, NiSi and Ni, PdGe and Pd. Due to the dissociation of the compound the formation of a phase richer in metal was observed to grow at the original compound/metal interface in the temperature range considered, 280–325°C for Pt2Si, 325°C for Ni2Si and 180–260°C for Pd2Ge. The growth kinetics of these new phases (Pt2Si and Pd2Ge) follow a parabolic relation between thickness and annealing time. At a given temperature the growth rate of Pt2Si and Pd2Ge in compound-metal structure is a factor $$\sqrt 2$$ higher than in the usual semiconductor-metal structure.

Measurement of the drift velocity of charge carriers in mercuric iodide

Abstract: The time‐of‐flight technique has been used to determine the electron and hole drift velocities in mercuric iodide crystals. The electron mobility is constant up to fields of 30 kV/cm, equal to 100 cm2/V sec at room temperature, and proportional to T−0.9 in the temperature range 114–300 °K. The hole mobility is equal to 4 cm2/V sec at room temperature and exhibits a T−1.7 dependence between 140 and 240 °K and a T−3.7 dependence between 240 and 350 °K.

Current saturation in zero-bandgap, top-gated graphene field-effect transistors.

Abstract: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported. The saturation velocity is attributed to scattering by interfacial phonons in the silicon dioxide layer supporting the graphene channels. These results demonstrate the feasibility of graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.

Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

Abstract: The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 102to 6 . 104V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.

Growth kinetics of planar binary diffusion couples: ’’Thin‐film case’’ versus ’’bulk cases’’

Abstract: It is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin (thin‐film case). With increasing thickness of the diffusion zones the influence of interfacial reaction barriers decreases and the simultaneous existence of diffusion‐controlled growth of all equilibrium phases is expected (bulk case). Selective growth of the first and second phases and the effect of impurities are discussed with the influence of interfacial reaction barriers and with references to the known cases of silicide formation.