G
G. Martin
Researcher at University of Illinois at Urbana–Champaign
Publications - 9
Citations - 1158
G. Martin is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Wurtzite crystal structure & Photoemission spectroscopy. The author has an hindex of 7, co-authored 9 publications receiving 1119 citations.
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Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
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Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
G. Martin,S. Strite,A. Botchkarev,Anant K. Agarwal,Angus Rockett,Hadis Morkoç,Walter R. L. Lambrecht,Benjamin Segall +7 more
TL;DR: In this article, the core level binding energies with respect to the valence-band maximum in both GaN and AlN bulk films were measured by x-ray photoemission spectroscopy.
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Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
TL;DR: In this article, it was shown that the threading defects originate at the substrate/film interface as the boundaries between differently stacked hexagonal domains, and are created by surface steps on substrates nonisomorphic with wurtzite GaN.
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X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3d states in GaN.
Walter R. L. Lambrecht,Benjamin Segall,S. Strite,G. Martin,Anant K. Agarwal,Hadis Morkoç,Angus Rockett +6 more
TL;DR: The effects of the Ga 3[ital d] semicore levels on the electronic structure of GaN are discussed and the calculated valence-band densities of states are found to be in good agreement with the XPS spectrum.
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Electrical properties of gaas/gan/gaas semiconductor-insulator-semiconductor structures
TL;DR: In this article, the authors report on the currentvoltage characteristics of GaAs/GaN/GaAs semiconductor-insulator-semiconductor structures as a function of temperature.