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Author

G. Meenakshi Sundram

Bio: G. Meenakshi Sundram is an academic researcher from Birla Institute of Technology and Science. The author has contributed to research in topics: Contact resistance & Electrical contacts. The author has co-authored 1 publications.

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Proceedings ArticleDOI
05 Apr 2012
TL;DR: In this article, the pull-in voltage of metal-to-metal contact series rf-MEMS switch is optimized for generating a force to obtain a stable contact resistance.
Abstract: This paper presents the design, analysis and simulation of metal-to metal contact series rf-MEMS switch for its pull-in voltage optimization Fixed — fixed flexure is used as a switching element and the Pull-in voltage is optimized for generating a force to obtain a stable contact resistance Au is used as the contact material The simulated value of the pull-in voltage (V pi ) is approximately 1020 V At the pull-in voltage the area occupied under contact is 889 µm2 and the value of contact force is 184 µN The switch pull-in voltage value is optimized at a value of 23 V giving contact area of 924 µm2 and contact force of 3155 µN