G
G. Molas
Researcher at European Automobile Manufacturers Association
Publications - 118
Citations - 1668
G. Molas is an academic researcher from European Automobile Manufacturers Association. The author has contributed to research in topics: Non-volatile memory & Resistive random-access memory. The author has an hindex of 20, co-authored 104 publications receiving 1483 citations.
Papers
More filters
Proceedings ArticleDOI
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration
Arnaud Hubert,Etienne Nowak,K. Tachi,V. Maffini-Alvaro,C. Vizioz,Christian Arvet,J. P. Colonna,J.M. Hartmann,Virginie Loup,L. Baud,S. Pauliac,Vincent Delaye,C. Carabasse,G. Molas,Gerard Ghibaudo,B. De Salvo,O. Faynot,Thomas Ernst +17 more
TL;DR: In this article, the Gate-All-Around (GAA) SONOS memory architecture with 4-level crystalline nanowire channels (down to 6nm-diameter) is extended to an independent double gate memory architecture, called φ-Flash.
Proceedings ArticleDOI
Resistive Memories for Ultra-Low-Power embedded computing design
E. Vianello,Olivier P. Thomas,G. Molas,O. Turkyilmaz,N. Jovanovic,Daniele Garbin,Giorgio Palma,M. Alayan,C. Nguyen,J. Coignus,Bastien Giraud,T. Benoist,M. Reyboz,Alain Toffoli,C. Charpin,Fabien Clermidy,L. Perniola +16 more
TL;DR: In this article, the authors address two technologies as an example of optimized devices for FPGA and fixed-logic IC design (as non volatile Flip-Flops) as well as non volatile flip-flops.
Proceedings ArticleDOI
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
Cecile Nail,G. Molas,P. Blaise,G. Piccolboni,Benoit Sklenard,C. Cagli,Mathieu Bernard,A. Roule,M. Azzaz,E. Vianello,C. Carabasse,R. Berthier,David Cooper,C. Pelissier,T. Magis,Gerard Ghibaudo,Christophe Vallée,D. Bedeau,O. Mosendz,B. De Salvo,L. Perniola +20 more
TL;DR: In this article, the correlation between endurance, window margin and retention of resistive RAM was investigated, showing high window margin up to 1010 cycles or high 300°C retention.
Journal ArticleDOI
Grain boundary composition and conduction in HfO2: An ab initio study
Kan-Hao Xue,Philippe Blaise,Leonardo R. C. Fonseca,G. Molas,E. Vianello,B. Traore,B. de Salvo,Gerard Ghibaudo,Yoshio Nishi +8 more
TL;DR: In this paper, the electronic properties of HfO2 grain boundaries employing a simple Σ5 (310)/[001] grain boundary model based on the cubic phase were investigated and the emergence of unoccupied defect states 0.4 ǫ eV below the conduction band due to the undercoordination of certain Hf ions in the grain boundary was shown.
Journal ArticleDOI
Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories
G. Molas,B. De Salvo,Gerard Ghibaudo,Denis Mariolle,Alain Toffoli,N. Buffet,R. A. Puglisi,Salvatore Lombardo,Simon Deleonibus +8 more
TL;DR: In this paper, a nanometer-sized floating-gate memory device, fabricated on silicon-on-insulator substrate and using silicon nanocrystals as storage nodes, is presented.