G
G. Q. Lo
Researcher at Agency for Science, Technology and Research
Publications - 160
Citations - 4117
G. Q. Lo is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Field-effect transistor & Optical switch. The author has an hindex of 35, co-authored 160 publications receiving 3829 citations.
Papers
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Journal ArticleDOI
High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
Navab Singh,Ajay Agarwal,Lakshmi Kanta Bera,Tsung-Yang Liow,R. Yang,S.C. Rustagi,C.H. Tung,Rakesh Kumar,G. Q. Lo,N. Balasubramanian,Dim-Lee Kwong +10 more
TL;DR: In this article, gate-all-around (GAA) n-and p-FETs on a silicon-on-insulator with 5-nm-diameter laterally formed Si nanowire channel were demonstrated.
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$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
TL;DR: In this paper, a significantly improved uniformity of device parameters, such as set voltage, reset voltage, and HRS and LRS resistance distributions, is successfully demonstrated on HfOx/TiOx multilayer (ML)-based resistive switching devices.
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CMOS compatible polarization splitter using hybrid plasmonic waveguide.
TL;DR: An ultrashort integrated polarization splitter using a hybrid plasmonic waveguide as the middle waveguide in a three-core arrangement to achieve large birefringence, allowing only transverse-magnetic polarized light to directionally couple to the cross port of the directional coupler.
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Silicon-based horizontal nanoplasmonic slot waveguides for on-chip integration
TL;DR: The results indicate the potential for seamless integration of various functional nanoplasmonic devices in existing Si electronic photonic integrated circuits (Si-EPICs) by means of a simple tapered coupler.
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Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors
Wei-Wei Fang,Navab Singh,Lakshmi Kanta Bera,H. S. Nguyen,S.C. Rustagi,G. Q. Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
TL;DR: In this article, the authors demonstrate the fabrication of vertically stacked SiGe nanowire (NW) arrays with a fully CMOS compatible technique using the phenomenon of Ge condensation onto Si and the faster oxidation rate of SiGe than Si to realize the vertical stacking of NWs.