G. Zimmermann

Bio: G. Zimmermann is an academic researcher from Leipzig University. The author has contributed to research in topics: Pulsed laser deposition & Thin film. The author has an hindex of 11, co-authored 19 publications receiving 917 citations.

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

Abstract: Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal?organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour?liquid?solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro-?and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I?V characteristics of ZnO:P nanowire/ZnO:Ga p?n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.

Refractive indices and band-gap properties of rocksalt MgxZn1−xO (0.68⩽x⩽1)

Abstract: The room-temperature optical pseudo-dielectric-functions of single-phase, single-crystalline rocksalt-structure MgxZn1−xO with Mg-content x between 0.68 and 1 were determined in the photon energy range from 0.75to9.10eV using spectroscopic ellipsometry. The refractive index determined in the spectral region below the fundamental absorption edge decreases with increasing Mg content. The pseudo-dielectric-functions reveal structures caused in critical points due to electronic band-to-band transitions and free exciton formation at the fundamental band-gap transition. Standard model dielectric function approaches were applied for line shape analysis. Upon increase of the bond ionicity with increasing Mg content the energies of the band-to-band transitions as well as the fundamental-band-gap exciton binding energy parameters increase, while the Γ-point spin-orbit-splitting energy parameter decreases. We compare our results with the band-gap properties of wurtzite-structure MgxZn1−xO with Mg-content x between 0...

Luminescence and surface properties of MgxZn1−xO thin films grown by pulsed laser deposition

Abstract: We investigated the surface roughness and the luminescence properties of MgxZn1−xO thin films (0⩽x⩽019) The thin films were grown on a-plane sapphire substrates by pulsed laser deposition The root-mean-square surface roughness depends on the oxygen partial pressure p(O2) applied during deposition and takes a minimal value of 06nm for p(O2)=1×10−3mbar Deposition of the thin films on a ZnO buffer layer further diminishes the surface roughness The photoluminescence maximum peak from the MgxZn1−xO thin films is due to free excitons, which are localized in potential minima at low temperatures, and shows a linear high-energy shift with increasing x The full width at half maximum (FWHM) of the photoluminescence depends on p(O2) Samples with the smallest FWHM values were grown at p(O2)=16×10−2mbar We analyze the contributions of alloy broadening and of the lateral Mg-concentration inhomogeneity to the photoluminescence FWHM In optimized samples FWHM is limited by random alloy broadening Scanning catho

Self-organized growth of ZnO-based nano- and microstructures

Abstract: ZnO-based nano- and micro-structures with controlled orientation, size, and lateral density were grown by specially designed two-step pulsed laser deposition and direct carbothermal growth, respectively. Different substrate orientations and nucleation layers allow well-defined tuning of growth direction and lateral arrangement of the wires. As a result, axial MgZnO-ZnO nano quantum dots and homogeneous radial nano coreshell quantum well structures are demonstrated. Donor and acceptor doping of nano- and microwires influence considerably both electrical characteristics as well as morphology including branching. Field effect transistors with n- and p-type wire channel and nanowire p-n junctions seem to prove a reproducible p-type conductivity of phosphorous-doped ZnO wires.

Pulsed-laser deposition and characterization of ZnO nanowires with regular lateral arrangement

Abstract: We report on the high-pressure pulsed-laser deposition growth of periodic arrays of free-standing single zinc oxide nanowires with uniform hexagonal arrangement and cross-section with thickness of less than 100 nm. In order to achieve the wire alignment, we prepared an ordered array of catalytic gold seed particles by a nanosphere lithography mask transfer technique using monodisperse spherical polystyrol nanoparticles. These templates were investigated by scanning electron microscopy and atomic force microscopy prior to nanowire growth. X-ray diffraction revealed the epitaxial relationships between the nanostructures and the a-plane sapphire substrate and excellent crystal quality. The optical properties of the ZnO nanowire arrays were measured by cathodoluminescence.

ZnO : From basics towards applications

Abstract: Several hundred thousands of tons of ZnO are used by per year, e.g. as an additive to concrete or to rubber. In the field of optoelectronics, ZnO holds promises as a material for a blue/UV optoelectronics, alternatively to GaN, as a cheap, transparent, conducting oxide, as a material for electronic circuits, which are transparent in the visible or for semiconductor spintronics. The main problem is presently, however, a high, reproducible and stable p-doping. We review in this contribution partly critically the material growth, fundamental properties of ZnO and of ZnO-based nanostructures, doping as well as present and future applications, with emphasis on the electronic and optical properties including stimulated emission. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

ZnO: Material, Physics and Applications

Abstract: ZnO is presently experiencing a research boom with more than 2000 ZnO-related publications in 2005. This phenomenon is triggered, for example, by hope to use ZnO as a material for blue/UV optoelectronics as an alternative to GaN, as a cheap, transparent, conducting oxide, as a material for electronic circuits that are transparent in the visible or for semiconductor spintronics. Currently, however, the main problem is to achieve high, reproducible and stable p-doping. Herein, we critically review aspects of the material growth, fundamental properties of ZnO and ZnO-based nanostructures and doping as well as present and future applications with emphasis on the electronic and optical properties including stimulated emission.

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

Abstract: Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal?organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour?liquid?solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro-?and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I?V characteristics of ZnO:P nanowire/ZnO:Ga p?n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.

ZnO nanostructures: growth, properties and applications

Abstract: ZnO is a material which is of great interest for a variety of applications due to its unique properties and the availability of a variety of growth methods resulting in a number of different morphologies and a wide range of material properties of synthesized nanostructures. In this review, we will discuss recent advances in important and/or controversial issues concerning ZnO properties and its applications. We will also discuss areas where further improvements are needed, and in particular discuss the issues related to the environmental stability of ZnO and its implications on reproducibility of measurements and the toxicity of ZnO nanomaterials.