Author
Gao Wenyu
Bio: Gao Wenyu is an academic researcher. The author has contributed to research in topics: Oxide. The author has co-authored 1 publications.
Topics: Oxide
Papers
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21 Oct 1998
TL;DR: In this paper, the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides was investigated, and it was demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4/H/sub 1/O/Sub 2/(SPM) solution prior to oxidization provides better oxide integrity than both HF-based solution dipping and preoxide growing in RCA SC1 or SC2 solutions.
Abstract: In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4//H/sub 2/O/sub 2/(SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides.