Gary H. Bernstein

Bio: Gary H. Bernstein is an academic researcher from University of Notre Dame. The author has contributed to research in topics: Quantum dot cellular automaton & Nanomagnet. The author has an hindex of 42, co-authored 293 publications receiving 9521 citations. Previous affiliations of Gary H. Bernstein include Arizona State University & University of Tennessee.

Quantum Cellular Automata

Abstract: The authors formulate a new paradigm for computing with cellular automata (CAS) composed of arrays of quantum devices-quantum cellular automata. Computing in such a paradigm is edge driven. Input, output, and power are delivered at the edge of the CA array only; no direct flow of information or energy to internal cells is required. Computing in this paradigm is also computing with the ground state. The architecture is so designed that the ground-state configuration of the array, subject to boundary conditions determined by the input, yields the computational result. The authors propose a specific realization of these ideas using two-electron cells composed of quantum dots. The charge density in the cell is very highly polarized (aligned) along one of the two cell axes, suggestive of a two-state CA. The polarization of one cell induces a polarization in a neighboring cell through the Coulomb interaction in a very non-linear fashion. Quantum cellular automata can perform useful computing. The authors show that AND gates, OR gates, and inverters can be constructed and interconnected.

Majority Logic Gate for Magnetic Quantum-Dot Cellular Automata

Abstract: We describe the operation of, and demonstrate logic functionality in, networks of physically coupled, nanometer-scale magnets designed for digital computation in magnetic quantum-dot cellular automata (MQCA) systems. MQCA offer low power dissipation and high integration density of functional elements and operate at room temperature. The basic MQCA logic gate, that is, the three-input majority logic gate, is demonstrated.

Digital logic gate using quantum-Dot cellular automata

Abstract: A functioning logic gate based on quantum-dot cellular automata is presented, where digital data are encoded in the positions of only two electrons. The logic gate consists of a cell, composed of four dots connected in a ring by tunnel junctions, and two single-dot electrometers. The device is operated by applying inputs to the gates of the cell. The logic AND and OR operations are verified using the electrometer outputs. Theoretical simulations of the logic gate output characteristics are in excellent agreement with experiment.

Realization of a Functional Cell for Quantum-Dot Cellular Automata

Abstract: This paper presents an experimental demonstration of a basic cell of the quantum-dot cellular automata, a transistorless approach to computation that addresses the issues of device density, interconnection, and power dissipation. The device under study was composed of four metal dots, connected with tunnel junctions and capacitors, and operated at <50 mK. Operation was evidenced by switching of a single electron between output dots controlled by a single electron switching in input dots, demonstrating a nonlinear, bistable response.

Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate)

Abstract: We investigate poly(methylmethacrylate) (PMMA) development processing with cold developers (4–10 °C) for its effect on resolution, resist residue, and pattern quality of sub-10 nm electron beam lithography (EBL). We find that low-temperature development results in higher EBL resolution and improved feature quality. PMMA trenches of 4–8 nm are obtained reproducibly at 30 kV using cold development. Fabrication of single-particle-width Au nanoparticle lines was performed by lift-off. We discuss key factors for formation of PMMA trenches at the sub-10 nm scale.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Band parameters for III–V compound semiconductors and their alloys

Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Antennas for light

Abstract: Optical antennas are devices that convert freely propagating optical radiation into localized energy, and vice versa. They enable the control and manipulation of optical fields at the nanometre scale, and hold promise for enhancing the performance and efficiency of photodetection, light emission and sensing. Although many of the properties and parameters of optical antennas are similar to their radiowave and microwave counterparts, they have important differences resulting from their small size and the resonant properties of metal nanostructures. This Review summarizes the physical properties of optical antennas, provides a summary of some of the most important recent developments in the field, discusses the potential applications and identifies the future challenges and opportunities.

The emergence of spin electronics in data storage

Abstract: Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.