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Author

Gaurav Siddharth

Bio: Gaurav Siddharth is an academic researcher from Indian Institute of Technology Indore. The author has contributed to research in topics: Thin film & Solar cell. The author has an hindex of 6, co-authored 16 publications receiving 64 citations.
Topics: Thin film, Solar cell, Ion beam, Plasmon, Sputtering

Papers
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Journal ArticleDOI
TL;DR: In this paper, an analytical study has been carried out to obtain the device performance parameters of InGaN/GaN-based multiple quantum well solar cell (MQWSC) and significant improvements are made upon the preexisting models reported in the literature for predicting device performance matrix for MQWSC.
Abstract: An analytical study has been carried out to obtain the device performance parameters of InGaN/GaN-based multiple quantum well solar cell (MQWSC). Significant improvements are made upon the preexisting models reported in the literature for predicting device performance matrix for MQWSC. The American Society for Testing and Materials (ASTM) standards data sheets are utilized for attaining photon flux density instead of blackbody radiation formula. Furthermore, the photon flux density is utilized to evaluate the performance parameters of MQWSC and bulk p-i-n solar cell. Results suggest that by incorporating QWs in the intrinsic region ( ${x} = {0.1}$ in $\text{In}_{x}\text{Ga}_{{1}-{x}}\text{N}$ ), ∼27% increment in the conversion efficiency can be achieved as compared to that from the bulk solar cell. Moreover, the impact of operating temperature in the solar cell performance is also studied. The rise in temperature leads to an increase in short-circuit current density; however, open-circuit voltage and conversion efficiency decrease. A decrement of ∼9.7% in the conversion efficiency of MQWSC is observed with the rise in temperature from 200 to 400 K as compared to ∼11.6% decline in p-i-n solar cell.

17 citations

Journal ArticleDOI
TL;DR: In this paper, a chemiresistive carbon monoxide (CO) gas sensor comprising of an organo-di-benzoic acidified zinc oxide (ODBA-ZnO) nanohybrid material is reported.
Abstract: A chemiresistive carbon monoxide (CO) gas sensor comprising of an organo-di-benzoic acidified zinc oxide (ODBA-ZnO) nanohybrid material is reported. The ODBA-ZnO hybrid material is prepared via a s...

14 citations

Journal ArticleDOI
TL;DR: In this article, a wide-band sputter-stimulated plasmonic feature in Ga-doped-MgZnO (GMZO) thin-films, which are observed due to the different metallic and metal-oxide nanoclusters formation, is reported.

13 citations

Journal ArticleDOI
TL;DR: In this article, an ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering, and the crystal structure of the deposited CZTsSe thin films over Zns is recognized as (112)-oriented, polycrystalline in nature, and free from the presence of any secondary phases such as Cu2(S,Se) or Zn
Abstract: Back-contact modification using a 10-nm ZnS layer in CZTSSe-based solar cell can play a crucial role in improving photovoltaic conversion efficiency. An ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering. The crystal structure of deposited CZTSSe thin films over ZnS is recognized as (112)-oriented, polycrystalline in nature, and free from the presence of any secondary phases such as Cu2(S,Se) or Zn(S,Se). The bandgap of CZTSSe thin films deposited over ultrathin ZnS is observed to increase from 1.49 (deposited over Mo directly) to 1.58 eV at room temperature, as determined by spectroscopic ellipsometry. In addition, numerical simulation has been performed using SCAPS software. The impact of ZnS layer has been simulated by using the defects in the absorber and at the interface of ZnS/CZTSSe. The simulated results have been validated with experimentally fabricated CZTSSe device. Simulated device with ZnS intermediate layer is observed to give rise to a photovoltaic conversion efficiency of 15.2%.

13 citations

Journal ArticleDOI
TL;DR: In this paper, an analytical and simulation evaluation of multiple quantum well solar cells (MQWSC) with CdZnO/ZnOs as the intrinsic layer, Sb-doped ZnO (SZO) as a p-type layer, and GZO as an n- type layer of the p-i-n solar cell (SC).
Abstract: This article presents analytical and simulation evaluation of multiple quantum well solar cells (MQWSC) with CdZnO/ZnO as the intrinsic layer, Sb-doped ZnO (SZO) as a p-type layer, and Ga-doped ZnO (GZO) as an n-type layer of the p-i-n solar cell (SC). The material parameters used in this article are obtained from the experimental reports on the properties of ZnO and CdZnO thin films grown by dual-ion-beam sputtering (DIBS). The American Society for Testing and Materials (ASTM) standards data sheets have been utilized for attaining photon flux density instead of the blackbody radiation formula. The analytically obtained results show good agreement with the simulated results obtained by the ATLAS simulation tool. The variation of device performance parameters is examined for thermal stability. The results show that, for the proposed ZnO-based MQWSC, the open-circuit voltage ( ${V}_{{\text {oc}}}$ ) has a negative temperature coefficient (−2.63 mV/°C), and short-circuit current density ( ${J}_{{\text {sc}}}$ ) and conversion efficiency ( ${\eta }$ ) have positive temperature coefficients of $2.43\times 10^{{-{3}}} \,\,{\text {mA}/\text {cm}^{{{2}}}\cdot ^{\circ }}\text{C}$ and $2.91\times 10^{{-{3}}}$ %/°C, respectively. Further, the device performance has been explored for variation in the number of quantum wells. The results present that an increase in the number of quantum wells has a negative impact on the performance parameters of ZnO-based MQWSC.

13 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, the rapid progress in the development of inorganic and organic solar cells (SCs) such as silicon, perovskite, III-V, quantum dot, dye sensitized, flexible SCs, thin film SCs and tandem SCs are reviewed.

78 citations

Journal ArticleDOI
TL;DR: In this paper, a planar homojunction perovskite photovoltaic device has been simulated by solar cell capacitance simulator (SCAPS) simulation analysis shows the dependence of PCE on the thickness and defects of the perovsite layer Recombination analysis at different junctions has been simulate using hypothetical interface layers at the respective junctions It has been revealed that the interface defects influence the device performance.
Abstract: Perovskite-based solar cells with planar configuration have been perceived as an alternative and attractive option for photovoltaic technology due to high power conversion efficiency (PCE) The performance of heterojunction-based devices is hindered by the recombination in the perovskite layers The homojunction is suitable for further improvement in PCE due to the built-in electric field, which will enhance the transport of photogenerated charge carriers, therefore, reducing recombination losses A detailed analysis of the homojunction-based device is needed for further improvement in PCE In this study, the planar homojunction perovskite photovoltaic device has been simulated by solar cell capacitance simulator (SCAPS) Simulation analysis shows the dependence of PCE on the thickness and defects of the perovskite layer Recombination analysis at the different junctions has been simulated using hypothetical interface layers at the respective junctions It has been revealed that the interface defects influence the device performance The proposed MAPbI3 homojunction-based devices have achieved more than 23% PCE, which is significantly higher than the existing planar heterojunction-based devices

21 citations

Journal ArticleDOI
TL;DR: In this paper, an analytical study has been carried out to obtain the device performance parameters of InGaN/GaN-based multiple quantum well solar cell (MQWSC) and significant improvements are made upon the preexisting models reported in the literature for predicting device performance matrix for MQWSC.
Abstract: An analytical study has been carried out to obtain the device performance parameters of InGaN/GaN-based multiple quantum well solar cell (MQWSC). Significant improvements are made upon the preexisting models reported in the literature for predicting device performance matrix for MQWSC. The American Society for Testing and Materials (ASTM) standards data sheets are utilized for attaining photon flux density instead of blackbody radiation formula. Furthermore, the photon flux density is utilized to evaluate the performance parameters of MQWSC and bulk p-i-n solar cell. Results suggest that by incorporating QWs in the intrinsic region ( ${x} = {0.1}$ in $\text{In}_{x}\text{Ga}_{{1}-{x}}\text{N}$ ), ∼27% increment in the conversion efficiency can be achieved as compared to that from the bulk solar cell. Moreover, the impact of operating temperature in the solar cell performance is also studied. The rise in temperature leads to an increase in short-circuit current density; however, open-circuit voltage and conversion efficiency decrease. A decrement of ∼9.7% in the conversion efficiency of MQWSC is observed with the rise in temperature from 200 to 400 K as compared to ∼11.6% decline in p-i-n solar cell.

17 citations

Journal ArticleDOI
28 Jun 2021-Sensors
TL;DR: In this paper, a review of the recent advances in doped ZnO for CO sensing applications is presented, which includes room-temperature gas sensing, and some perspectives for future investigations in the context of advancements in CO sensing using doped znO2.
Abstract: Monitoring and detecting carbon monoxide (CO) are critical because this gas is toxic and harmful to the ecosystem. In this respect, designing high-performance gas sensors for CO detection is necessary. Zinc oxide-based materials are promising for use as CO sensors, owing to their good sensing response, electrical performance, cost-effectiveness, long-term stability, low power consumption, ease of manufacturing, chemical stability, and non-toxicity. Nevertheless, further progress in gas sensing requires improving the selectivity and sensitivity, and lowering the operating temperature. Recently, different strategies have been implemented to improve the sensitivity and selectivity of ZnO to CO, highlighting the doping of ZnO. Many studies concluded that doped ZnO demonstrates better sensing properties than those of undoped ZnO in detecting CO. Therefore, in this review, we analyze and discuss, in detail, the recent advances in doped ZnO for CO sensing applications. First, experimental studies on ZnO doped with transition metals, boron group elements, and alkaline earth metals as CO sensors are comprehensively reviewed. We then focused on analyzing theoretical and combined experimental-theoretical studies. Finally, we present the conclusions and some perspectives for future investigations in the context of advancements in CO sensing using doped ZnO, which include room-temperature gas sensing.

15 citations

Journal ArticleDOI
TL;DR: In this article, the InGaN/GaN multiple quantum wells (InGaN and GaN MQWs) cells have been proposed for high temperature photovoltaic/thermal (PV/T) applications.

15 citations