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Geetanjali Deokar

Researcher at King Abdullah University of Science and Technology

Publications -  23
Citations -  648

Geetanjali Deokar is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Graphene & Chemical vapor deposition. The author has an hindex of 8, co-authored 21 publications receiving 424 citations. Previous affiliations of Geetanjali Deokar include Centre national de la recherche scientifique & university of lille.

Papers
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Journal ArticleDOI

Towards high quality CVD graphene growth and transfer

Geetanjali Deokar, +7 more
- 01 Aug 2015 - 
TL;DR: In this paper, Bilayer-free monolayer graphene was obtained by a careful pre-annealing step and by optimizing the H2 flow during growth, and as-grown graphene was transferred using an improved wet chemical graphene transfer process.
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Synthesis and characterization of MoS2 nanosheets

Geetanjali Deokar, +4 more
- 20 Jan 2016 - 
TL;DR: In this article, the synthesis of MoS2 nanosheets using a simple two-step additive-free growth technique was reported, and the as-synthesized nanOSheets were characterized to determine their structure and composition, as well as their optical properties.
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MoS2–carbon nanotube hybrid material growth and gas sensing

Geetanjali Deokar, +14 more
- 01 Dec 2017 - 
TL;DR: In this paper, a uniform coverage of MoS2 HNPs with a thickness around 20 nm is achieved by chemical vapor deposition technique, and the results confirm that the CNT template plays an important role in the growth of the HNP.
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Large area growth of vertically aligned luminescent MoS2 nanosheets

Geetanjali Deokar, +7 more
- 07 Jan 2017 - 
TL;DR: The as-grown MoS2 NSs would be highly useful in the development of catalysis, nano-optoelectronics, gas-sensing and bio-sensor applications, and the high crystallinity and quality of the synthesized NSs are revealed.
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Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

Wei Wei, +8 more
- 11 Aug 2015 - 
TL;DR: In this article, a fabrication process of graphene field effect transistors (GFETs) using natural oxidation of aluminum as dielectrics was presented, which provided an alternative fabrication choice for future flexible electronics with the large scale and arbitrary substrates.