G
Geneviève Grenet
Researcher at Institut des Nanotechnologies de Lyon
Publications - 74
Citations - 1281
Geneviève Grenet is an academic researcher from Institut des Nanotechnologies de Lyon. The author has contributed to research in topics: Molecular beam epitaxy & X-ray photoelectron spectroscopy. The author has an hindex of 17, co-authored 73 publications receiving 1170 citations. Previous affiliations of Geneviève Grenet include École centrale de Lyon & École Centrale Paris.
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Journal ArticleDOI
Instabilities in crystal growth by atomic or molecular beams
TL;DR: In this paper, a review of the most frequent instabilities in ballistic growth is presented, which are mostly kinetic (when the desired state cannot be reached because of a lack of time) or thermodynamic (when a desired state is unstable).
Journal ArticleDOI
Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
TL;DR: In this article, the role played by buffer surface morphology and by alloying effects on the size, shape and lateral distribution of InAs nanostructures grown on InP(001) substrates by molecular beam epitaxy was discussed.
Journal ArticleDOI
Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
Julien Brault,Michel Gendry,Geneviève Grenet,G. Hollinger,José Olivares,Bassem Salem,Taha Benyattou,Georges Bremond +7 more
TL;DR: In this article, InAs nanostructures were grown on In0.52Al0.48As alloy lattice matched on InP(001) substrates by molecular beam epitaxy using specific growth parameters in order to improve island self-organization.
Journal ArticleDOI
Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)
Julien Brault,Michel Gendry,Olivier Marty,M. Pitaval,J. Olivares,Geneviève Grenet,G. Hollinger +6 more
TL;DR: Using atomic force microscopy (AFM) imaging, transmission electron microscopy and photoluminescence (PL), the authors studied InAs stacked islands on InP(001) versus the InAlAs spacer layer thickness (SLT).
Proceedings ArticleDOI
Feasibility of strain relaxed InAsP and InGaAs compliant substrates
M. Kostrzewa,Geneviève Grenet,Philippe Regreny,Jean Louis Leclercq,N. Mokni,A. Danescu,F. Sidoroff,E. Jalaguier,P. Perreau,H. Moriceau,G. Hollinger +10 more
TL;DR: In this article, the authors investigated the feasibility of using ultrathin films as compliant substrates and showed that InAs/sub 0.25/P/sub0.75/ (0.8% compressively-stressed on InP) film stuck onto a Si host substrate via borophosphorosilicate glass (BPSG).