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Geoffrey Pourtois

Researcher at Katholieke Universiteit Leuven

Publications -  271
Citations -  9913

Geoffrey Pourtois is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Dielectric & Passivation. The author has an hindex of 44, co-authored 253 publications receiving 8657 citations. Previous affiliations of Geoffrey Pourtois include Max Planck Society & IMEC.

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Proceedings ArticleDOI

10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

TL;DR: In this paper, the smallest HfO 2 -based resistive RAM (RRAM) cell was reported, featuring a novel Hf/HfO x resistive element stack, with an area of less than 10×10 nm2, fast ns-range on/off switching times at lowvoltages and with a switching energy per bit of <0.1pJ.
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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

TL;DR: In this article, the electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory.
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Electronic properties of hydrogenated silicene and germanene

TL;DR: In this paper, the electronic properties of hydrogenated silicene and germanene, so called silicane and Germanane, respectively, are investigated using first-principles calculations based on density functional theory.
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Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymers

TL;DR: The calculations indicate a two-step mechanism for intrachain energy transfer with hopping along the conjugated chains as the rate-limiting step; the higher efficiency of the interchain transfer process is mainly due to larger electronic coupling matrix elements between closely lying chains.
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Bandgap opening in oxygen plasma-treated graphene.

TL;DR: The opening of a bandgap in graphene is explained in terms of functionalization of its pristine lattice with oxygen atoms, that is, on the extent of the bandgap opening upon increased functionalisation density.