Georg Schitter

Bio: Georg Schitter is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Actuator & Adaptive optics. The author has an hindex of 35, co-authored 236 publications receiving 6023 citations. Previous affiliations of Georg Schitter include University of California, Santa Barbara & École Polytechnique Fédérale de Lausanne.

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Abstract: We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self-assembled monolayer (SAM). The observed shifts of the transfer characteristics range from −2to50V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4×1012∕cm2. In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold re...

Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator

Abstract: We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4*10^12/cm^2. In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold region is broadened, indicating that the SAM creates additional trap states, whose density is estimated to be of order 1*10^12/cm^2.

Design and Modeling of a High-Speed AFM-Scanner

Abstract: A new mechanical scanner design for a high-speed atomic force microscope (AFM) is presented and discussed in terms of modeling and control. The positioning range of this scanner is 13 mum in the X- and Y-directions and 4.3 mum in the vertical direction. The lowest resonance frequency of this scanner is above 22 kHz. This paper is focused on the vertical direction of the scanner, being the crucial axis of motion with the highest precision and bandwidth requirements for gentle imaging with the AFM. A second- and a fourth-order mathematical model of the scanner are derived that allow new insights into important design parameters. Proportional-integral (Pl)-feedback control of the high-speed scanner is discussed and the performance of the new AFM is demonstrated by imaging a calibration grating and a biological sample at 8 frames/s.

High performance feedback for fast scanning atomic force microscopes

Abstract: We identify the dynamics of an atomic force microscope (AFM) in order to design a feedback controller that enables faster image acquisition at reduced imaging error compared to the now generally employed proportional integral differential (PID) controllers. First, a force model for the tip–sample interaction in an AFM is used to show that the dynamic behavior of the cantilever working in contact mode can be neglected for control purposes due to the relatively small oscillation amplitude of the cantilever in response to a defined topography step. Consequently, the dynamic behavior of the AFM system can be reduced to the behavior of the piezoelectric scanner making the design of a model based controller for the AFM possible. Second, a black box identification of the scanner of a commercial AFM (Nanoscope IIIa, Digital Instruments) is performed using subspace methods. Identification yields a mathematical model of the scanner which allows us to design a new controller utilizing H∞ theory. Finally, this contro...

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Principles Of Fluorescence Spectroscopy

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Principles Of Optics Electromagnetic Theory Of Propagation Interference And Diffraction Of Light

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