Georges Pavlidis

TL;DR: The unprecedented uniformity of the few-layer p-type WSe2 with wafer-scale thickness and electrical uniformity is synthesized through direct selenization of thin films of e-beam evaporated W on SiO2 substrates.

TL;DR: It is reported that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required, and the S-type negative differential resistance I–V characteristics are only a subset of possible solutions.

TL;DR: In this paper, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were employed to determine if each technique is capable of providing insight into the thermal properties of vertical devices.

TL;DR: In this article, self-heating in gallium nitride based high frequency, high electron mobility power transistors (GaN HEMTs) is inspected using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging.

TL;DR: In this article, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors under various bias conditions.