Gerard C. M. Meijer

Bio: Gerard C. M. Meijer is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Capacitive sensing & CMOS. The author has an hindex of 37, co-authored 175 publications receiving 4003 citations. Previous affiliations of Gerard C. M. Meijer include Erasmus University Rotterdam.

Temperature sensors and voltage references implemented in CMOS technology

Abstract: This paper reviews the concepts, opportunities and limitations of temperature sensors and voltage references realized in CMOS technology. It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages. Furthermore, it is shown that dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise. The effects of mechan- ical stress are a major source of inaccuracy. In CMOS technology, the mechanical-stress effects are small, as compared to those in bipolar technology. It is concluded that, with low-cost CMOS tech- nolog, rather accurate voltage references and temperature sensors can be realized.

A curvature-corrected low-voltage bandgap reference

Abstract: A curvature-corrected bandgap reference that can function at supply voltages as low as 1 V, at a supply current of only 100 mu A, is presented. After trimming, this bandgap reference has a temperature coefficient (TC) of +or-4 p.p.m./ degrees C. The reference voltage is about 200 mV and it can easily be adjusted to higher values. The temperature range of this circuit is from 0 to 125 degrees C. This bandgap reference is realized using a standard bipolar process with base-diffused resistors. >

Smart sensor systems

Abstract: Preface. About the Authors. 1 Smart Sensor Systems: Why? Where? How? ( Johan H. Huijsing ). 1.1 Third Industrial Revolution. 1.2 Definitions for Several Kinds of Sensors. 1.3 Automated Production Machines. 1.4 Automated Consumer Products. 1.5 Conclusion. References. 2 Interface Electronics and Measurement Techniques for Smart Sensor Systems ( Gerard C.M. Meijer ). 2.1 Introduction. 2.2 Object-oriented Design of Sensor Systems. 2.3 Sensing Elements and Their Parasitic Effects. 2.4 Analog-to-digital Conversion. 2.5 High Accuracy Over a Wide Dynamic Range. 2.6 A Universal Transducer Interface. 2.7 Summary and Future Trends. Problems. References. 3 Silicon Sensors: An Introduction ( Paddy J. French ). 3.1 Introduction. 3.2 Measurement and Control Systems. 3.3 Transducers. 3.4 Transducer Technologies. 3.5 Examples of Silicon Sensors. 3.6 Summary and Future Trends. References. 4 Optical Sensors Based on Photon Detection ( Reinoud F. Wolffenbuttel ). 4.1 Introduction. 4.2 Photon Absorption in Silicon. 4.3 The Interface: Photon Transmission Into Silicon. 4.4 Photon Detection in Silicon Photoconductors. 4.5 Photon Detection in Silicon pn Junctions. 4.6 Detection Limit. 4.7 Photon Detectors with Gain. 4.8 Application Examples. 4.9 Summary and Future Trends. Problems. References. 5 Physical Chemosensors ( Michael J. Vellekoop ). 5.1 Introduction. 5.2 Physical Chemosensing. 5.3 Energy Domains. 5.4 Examples and Applications. 5.5 Examples of in situ Applications. 5.6 Microfluidics Devices. 5.7 Conclusions. Problems. References. 6 Thermal Sensors ( Sander (A.W.) van Herwaarden ). 6.1 The Functional Principle of Thermal Sensors. 6.2 Heat Transfer Mechanisms. 6.3 Thermal Structures. 6.4 Temperature-Difference Sensing Elements. 6.5 Sensors Based on Thermal Measurements. 6.6 Summary and Future Trends. Problems. References. 7 Smart Temperature Sensors and Temperature-Sensor Systems ( Gerard C.M. Meijer ). 7.1 Introduction. 7.2 Application-related Requirements and Problems of Temperature Sensors. 7.3 Resistive Temperature-sensing Elements. 7.4 Temperature-sensor Features of Transistors. 7.5 Smart Temperature Sensors and Systems. 7.6 Case Studies of Smart-sensor Applications. 7.7 Summary and Future Trends. Problems. References. 8 Capacitive Sensors ( Xiujun Li and Gerard C.M. Meijer ). 8.1 Introduction. 8.2 Basics of Capacitive Sensors. 8.3 Examples of Capacitive Sensors. 8.4 The Design of Electrode Configurations. 8.5 Reduction of Field-bending Effects: Segmentation. 8.6 Selectivity for Electrical Signals and Electrical Parameters. 8.7 Summary and Future Trends. Problems. References. 9 Integrated Hall Magnetic Sensors ( Radivoje S. Popovi'c and Pavel Kejik ). 9.1 Introduction. 9.2 Hall Effect and Hall Elements. 9.3 Integrated Hall Sensor Systems. 9.4 Examples of Integrated Hall Magnetic Sensors. Problems. References. 10 Universal Asynchronous Sensor Interfaces ( Gerard C.M. Meijer and Xiujun Li ). 10.1 Introduction. 10.2 Universal Sensor Interfaces. 10.3 Asynchronous Converters. 10.4 Dealing with Problems of Low-cost Design of Universal Interface ICs. 10.5 Front-end Circuits. 10.6 Case Studies. 10.7 Summary and Future Trends. Problems. References. 11 Data Acquisition for Frequency- and Time-domain Sensors ( Sergey Y. Yurish ). 11.1 Introduction. 11.2 DAQ Boards: State of the Art. 11.3 DAQ Board Design for Quasi-digital Sensors. 11.4 Universal Frequency-to-digital Converters (UFDC). 11.5 Applications and Examples. 11.6 Summary and Future Trends. Problems. References. 12 Microcontrollers and Digital Signal Processors for Smart Sensor Systems ( Ratcho M. Ivanov ). 12.1 Introduction. 12.2 MCU and DSP Architectures, Organization, Structures, and Peripherals. 12.3 Choosing a Low-Power MCU or DSP. 12.4 Timer Modules. 12.5 Analog Comparators, ADCs, and DACs as Modules of Microcontrollers. 12.6 Embedded Networks and LCD Interfacing. 12.7 Development Tools and Support. 12.8 Conclusions. References Sites. Appendix A Material Data. Appendix B Conversion for non-SI Units. Index.

Liquid-level measurement system based on a remote grounded capacitive sensor

Abstract: This paper describes the design and implementation of a liquid-level measurement system based on a remote grounded capacitive sensor. The electrodes of the capacitive sensor are built with affordable materials: a rod of stainless steel and a PTFE-insulated wire. The interface circuit relies on a simple relaxation oscillator and a microcontroller. A cable with active shielding interconnects the sensor to the interface circuit. The stability of the active-shielding circuit is analysed by taking into account the parasitic components of both the interconnecting cable and the sensor. The system has been experimentally tested by measuring the level of tap water in a grounded metallic container. Over a level range of 70 cm, the system has a non-linearity error smaller than 0.35 mm and a resolution better than 0.10 mm for a measuring time of 20 ms.

Design of Analog CMOS Integrated Circuits

Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies. Table of contents 1 Introduction to Analog Design 2 Basic MOS Device Physics 3 Single-Stage Amplifiers 4 Differential Amplifiers 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops 16 Short-Channel Effects and Device Models 17 CMOS Processing Technology 18 Layout and Packaging

Handbook of modern sensors

Abstract: Data Acquisition- Sensor Characteristics- Physical Principles of Sensing- Optical Components of Sensors- Interface Electronic Circuits- Occupancy and Motion Detectors- Position, Displacement, and Level- Velocity and Accleration- Force, Strain and Tactile Sensors- Pressure Sensors- Flow Sensors- Acoustic Sensors- Humidity and Moisture Sensors- Light Detectors- Radiation Detectors- Temperature Sensors- Chemical Sensors- Sensor Technologies- Appendix

Review: Semiconductor Piezoresistance for Microsystems

Abstract: Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

Highly stretchable, transparent ionic touch panel

Abstract: Because human-computer interactions are increasingly important, touch panels may require stretchability and biocompatibility in order to allow integration with the human body. However, most touch panels have been developed based on stiff and brittle electrodes. We demonstrate an ionic touch panel based on a polyacrylamide hydrogel containing lithium chloride salts. The panel is soft and stretchable, so it can sustain a large deformation. The panel can freely transmit light information because the hydrogel is transparent, with 98% transmittance for visible light. A surface-capacitive touch system was adopted to sense a touched position. The panel can be operated under more than 1000% areal strain without sacrificing its functionalities. Epidermal touch panel use on skin was demonstrated by writing words, playing a piano, and playing games.

A low-voltage, low quiescent current, low drop-out regulator

Abstract: The demand for low-voltage, low drop-out (LDO) regulators is increasing because of the growing demand for portable electronics, i.e., cellular phones, pagers, laptops, etc. LDO's are used coherently with dc-dc converters as well as standalone parts. In power supply systems, they are typically cascaded onto switching regulators to suppress noise and provide a low noise output. The need for low voltage is innate to portable low power devices and corroborated by lower breakdown voltages resulting from reductions in feature size. Low quiescent current in a battery-operated system is an intrinsic performance parameter because it partially determines battery life. This paper discusses some techniques that enable the practical realizations of low quiescent current LDO's at low voltages and in existing technologies. The proposed circuit exploits the frequency response dependence on load-current to minimize quiescent current flow. Moreover, the output current capabilities of MOS power transistors are enhanced and drop-out voltages are decreased for a given device size. Other applications, like dc-dc converters, can also reap the benefits of these enhanced MOS devices. An LDO prototype incorporating the aforementioned techniques was fabricated. The circuit was operable down to input voltages of 1 V with a zero-load quiescent current flow of 23 /spl mu/A. Moreover, the regulator provided 18 and 50 mA of output current at input voltages of 1 and 1.2 V, respectively.