G
Gerard Mourou
Researcher at École Polytechnique
Publications - 664
Citations - 36215
Gerard Mourou is an academic researcher from École Polytechnique. The author has contributed to research in topics: Laser & Ultrashort pulse. The author has an hindex of 82, co-authored 653 publications receiving 34147 citations. Previous affiliations of Gerard Mourou include University of Michigan & San Diego State University.
Papers
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Journal ArticleDOI
0.2-TW laser system at 1kHz.
TL;DR: A 1-kHz repetition-rate Ti:sapphire laser system that can simultaneously generate high peak and average powers of 0.2TW and 4W is developed and it is demonstrated experimentally that the pulse duration at the output is limited only by fifth-order dispersion.
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High-energy ion generation in interaction. of short laser pulse with high-density plasma
Yasuhiko Sentoku,Valery Bychenkov,Kirk Flippo,Anatoly Maksimchuk,K. Mima,Gerard Mourou,Zheng-Ming Sheng,Donald P. Umstadter +7 more
TL;DR: In this paper, the mechanism primarily responsible for the acceleration of ions was identified and the ion energy dependence on laser intensity, preplasma scale length, and relative ion energies for a multi-species plasma was analyzed.
Patent
Measurement of electrical signals with picosecond resolution
Janis A Valdmanis,Gerard Mourou +1 more
TL;DR: In this paper, an electro-optic sampling of the signal in an electrooptic crystal, the index of which changes in response to the electric field produced by the signal, in accordance with the Pockels effect, is measured with sub-picosecond resolution.
Journal ArticleDOI
More Intense, Shorter Pulses
Gerard Mourou,Toshiki Tajima +1 more
TL;DR: Analysis of the history of laser development reveals that the pulse duration and intensity of lasers (or derived coherent radiation bursts) are linearly related over more than 18 orders of magnitude, leading to the conclusion that the shortest coherent pulse should come from such a large-sized laser.
Journal ArticleDOI
High‐power switching with picosecond precision
Gerard Mourou,Wayne H. Knox +1 more
TL;DR: In this article, the authors show that in spite of the thermal instability shortcoming experienced in Si, quasi-dc bias operation can be utilized in a manner which relaxes stringent synchronization requirements.