G
Gerhard Abstreiter
Researcher at Technische Universität München
Publications - 791
Citations - 26483
Gerhard Abstreiter is an academic researcher from Technische Universität München. The author has contributed to research in topics: Quantum dot & Quantum well. The author has an hindex of 77, co-authored 791 publications receiving 25631 citations. Previous affiliations of Gerhard Abstreiter include Fujitsu & Nanosystems Initiative Munich.
Papers
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Optically programmable electron spin memory using semiconductor quantum dots
M. Kroutvar,Yann Ducommun,Dominik Heiss,Max Bichler,Dieter Schuh,Gerhard Abstreiter,Jonathan J. Finley +6 more
TL;DR: This work demonstrates a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation, and directly measure the intrinsic spin flip time and its dependence on magnetic field.
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Coherent properties of a two-level system based on a quantum-dot photodiode
Artur Zrenner,Artur Zrenner,E. Beham,S. Stufler,S. Stufler,F. Findeis,Martin Bichler,Gerhard Abstreiter +7 more
TL;DR: It is demonstrated that coherent optical excitations in the quantum-dot two-level system can be converted into deterministic photocurrents and found that this device can function as an optically triggered single-electron turnstile.
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How many-particle interactions develop after ultrafast excitation of an electron–hole plasma
TL;DR: It is shown that the onset of collective behaviour such as Coulomb screening and plasmon scattering exhibits a distinct time delay of the order of the inverse plasma frequency, that is, several 10-14 seconds after ultrafast excitation of an electron–hole plasma in GaAs.
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Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D. Spirkoska,Jordi Arbiol,Anders Gustafsson,Sonia Conesa-Boj,Frank Glas,Ilaria Zardo,Matthias Heigoldt,Mhairi Gass,A Bleloch,Sònia Estradé,Michael Kaniber,J. Rossler,Francesca Peiró,Joan Ramon Morante,Gerhard Abstreiter,Lars Samuelson,A. Fontcuberta i Morral,A. Fontcuberta i Morral +17 more
TL;DR: The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented in this paper.
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Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si / Si x Ge 1 − x Superlattices
TL;DR: The observation of two-dimensional electron systems and enhanced mobilities in Si/Ge strained-layer multilayer structures and the importance of the built-in strain in lowering the conduction band in Si is emphasized.