G
Geun Ho Ahn
Researcher at Stanford University
Publications - 46
Citations - 3742
Geun Ho Ahn is an academic researcher from Stanford University. The author has contributed to research in topics: Photonics & Silicon photonics. The author has an hindex of 19, co-authored 35 publications receiving 2560 citations. Previous affiliations of Geun Ho Ahn include University of California, Berkeley & Lawrence Berkeley National Laboratory.
Papers
More filters
Journal ArticleDOI
MoS2 transistors with 1-nanometer gate lengths
Sujay B. Desai,Sujay B. Desai,Surabhi R. Madhvapathy,Surabhi R. Madhvapathy,Angada B. Sachid,Angada B. Sachid,Juan Pablo Llinas,Juan Pablo Llinas,Qingxiao Wang,Geun Ho Ahn,Geun Ho Ahn,Gregory Pitner,Moon J. Kim,Jeffrey Bokor,Jeffrey Bokor,Chenming Hu,H.-S. Philip Wong,Ali Javey,Ali Javey +18 more
TL;DR: Molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode are demonstrated, which exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106.
Journal ArticleDOI
Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature
James Bullock,James Bullock,Matin Amani,Matin Amani,Joy Cho,Joy Cho,Yu Ze Chen,Geun Ho Ahn,Geun Ho Ahn,Valerio Adinolfi,Valerio Adinolfi,Vivek Raj Shrestha,Yang Gao,Kenneth B. Crozier,Yu-Lun Chueh,Ali Javey,Ali Javey +16 more
TL;DR: In this article, a bias-selectable polarization-resolved photodetector that operates without the need for external optics was proposed. But the performance of the two-terminal device was not evaluated.
Journal ArticleDOI
4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics
Daniil Lukin,Constantin Dory,Melissa A. Guidry,Ki Youl Yang,Sattwik Deb Mishra,Rahul Trivedi,Marina Radulaski,Marina Radulaski,Shuo Sun,Dries Vercruysse,Geun Ho Ahn,Jelena Vuckovic +11 more
TL;DR: In this article, a fabrication process for thin films of 4H-SiC, which are compatible with industry-standard, CMOS nanofabrication, is presented, which provides a viable route towards industry-compatible, scalable colour-centre-based quantum technologies, including the monolithic generation and frequency conversion of quantum light on-chip.
Journal ArticleDOI
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
Tania Roy,Tania Roy,Mahmut Tosun,Mahmut Tosun,Mark Hettick,Mark Hettick,Geun Ho Ahn,Geun Ho Ahn,Chenming Hu,Ali Javey,Ali Javey +10 more
TL;DR: In this article, the authors demonstrate 2D-2D tunneling in a WSe2/SnSe2 van der Waals vertical heterojunction device, where WSe 2 is used as the gate controlled p-layer and SnSe2 is the degenerately n-type layer.
Journal ArticleDOI
Strain-Engineered Growth of Two-Dimensional Materials
Geun Ho Ahn,Geun Ho Ahn,Matin Amani,Matin Amani,Haider I. Rasool,Haider I. Rasool,Haider I. Rasool,Der Hsien Lien,Der Hsien Lien,James P. Mastandrea,James P. Mastandrea,Joel W. Ager,Joel W. Ager,Madan Dubey,Daryl C. Chrzan,Daryl C. Chrzan,Andrew M. Minor,Andrew M. Minor,Andrew M. Minor,Ali Javey,Ali Javey +20 more
TL;DR: Control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics, and a dramatic modulation of the band structure.