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Gianluca Fiori
Researcher at University of Pisa
Publications - 209
Citations - 9129
Gianluca Fiori is an academic researcher from University of Pisa. The author has contributed to research in topics: Graphene & Field-effect transistor. The author has an hindex of 37, co-authored 195 publications receiving 7269 citations. Previous affiliations of Gianluca Fiori include Purdue University & IMEC.
Papers
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Electronics based on two-dimensional materials
Gianluca Fiori,Francesco Bonaccorso,Giuseppe Iannaccone,Tomas Palacios,Daniel Neumaier,Alan Seabaugh,Sanjay K. Banerjee,Luigi Colombo +7 more
TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
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Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures
Daryl McManus,Sandra Vranic,Freddie Withers,Veronica Sanchez-Romaguera,Massimo Macucci,Huafeng Yang,Roberto Sorrentino,Khaled Parvez,Seok-Kyun Son,Giuseppe Iannaccone,Kostas Kostarelos,Gianluca Fiori,Cinzia Casiraghi +12 more
TL;DR: A general approach to achieve inkjet-printable, water-based, two-dimensional crystal formulations, which also provide optimal film formation for multi-stack fabrication and in vitro dose-escalation cytotoxicity assays confirm the biocompatibility of the inks, extending their possible use to biomedical applications.
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Ab-Initio Simulations of Deformation Potentials and Electron Mobility in Chemically Modified Graphene and two-dimensional hexagonal Boron-Nitride
S. Bruzzone,Gianluca Fiori +1 more
TL;DR: In this paper, an ab-initio study of electron mobility and electron-phonon coupling in chemically modified graphene, considering fluorinated and hydrogenated graphene at different percentage coverage, is presented.
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Simulation of Graphene Nanoribbon Field-Effect Transistors
TL;DR: In this paper, an atomistic 3D simulation of graphene nanoribbon field effect transistors (GNR-FETs) is presented, based on the self consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight binding Hamiltonian.
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Performance of arsenene and antimonene double-gate MOSFETs from first principles
TL;DR: Detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi's approximation and demonstrate that ultra-scaled devices in the sub-10-nm scale show a performance that is compliant with industry requirements.