Author
Giorgio Fallica
Bio: Giorgio Fallica is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Silicon photomultiplier & Avalanche photodiode. The author has an hindex of 23, co-authored 106 publications receiving 2029 citations.
Papers published on a yearly basis
Papers
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University of Hamburg1, Brunel University London2, University of Liverpool3, Fermilab4, Max Planck Society5, University of Perugia6, University of Glasgow7, Lancaster University8, Spanish National Research Council9, University of Ljubljana10, Ghent University11, King's College London12, Karlsruhe Institute of Technology13, Brookhaven National Laboratory14, STMicroelectronics15, University of California, Berkeley16, CERN17, Imperial College London18, Czech Technical University in Prague19, Université de Montréal20, National Academy of Sciences of Ukraine21, Tel Aviv University22, Kurchatov Institute23, Academy of Sciences of the Czech Republic24, SINTEF25, Royal Institute of Technology26, Micron Technology27, Charles University in Prague28, Technical University of Dortmund29
01 Jul 2001-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Abstract: The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×1014 cm−2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.
402 citations
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University of Hamburg1, Brunel University London2, University of Liverpool3, Fermilab4, Max Planck Society5, University of Perugia6, University of Glasgow7, Lancaster University8, Spanish National Research Council9, University of Ljubljana10, Ghent University11, King's College London12, Karlsruhe Institute of Technology13, Brookhaven National Laboratory14, STMicroelectronics15, University of California, Berkeley16, CERN17, Imperial College London18, Czech Technical University in Prague19, Charles University in Prague20, National Academy of Sciences of Ukraine21, Université de Montréal22, Tel Aviv University23, Kurchatov Institute24, Academy of Sciences of the Czech Republic25, SINTEF26, Royal Institute of Technology27, Micron Technology28, Technical University of Dortmund29
01 Jun 2001-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.
Abstract: This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.
108 citations
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TL;DR: In this paper, the design and fabrication of a single photon avalanche detector (SPAD) in planar technology is discussed, and experimental test procedures are described for dark counting rate, afterpulsing probability, photon timing resolution, and quantum detection efficiency.
Abstract: Design and fabrication of single photon avalanche detector (SPAD) in planar technology is reported. Device design and critical issues in the technology are discussed. Experimental test procedures are described for dark-counting rate, afterpulsing probability, photon timing resolution, and quantum detection efficiency. Low-noise detectors are obtained, with dark counting rates down to 10 c/s for devices with 10 /spl mu/m diameter, down to 1 kc/s for 50 /spl mu/m diameter. The technology is suitable for monolithic integration of SPAD detectors and associated circuits.
107 citations
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INAF1
TL;DR: In this paper, the authors present the results of the first electrical and optical characterization performed on 1 mm2 total area Silicon Photomultipliers (SiPM) fabricated in standard silicon planar technology at the STMicroelectronics Catania R&D clean room facility.
Abstract: In this paper we present the results of the first electrical and optical characterization performed on 1 mm2 total area Silicon Photomultipliers (SiPM) fabricated in standard silicon planar technology at the STMicroelectronics Catania R&D clean room facility. The device consists of 289 microcells and has a geometrical fill factor of 48%. Breakdown voltage, gain, dark noise rate, crosstalk, photon detection efficiency and linearity have been measured in our laboratories. The optical characterization has been performed by varying the temperature applied to the device. The results shown in the manuscript demonstrate that the device already exhibits relevant features in terms of low dark noise rate and inter-pixel crosstalk probability, high photon detection efficiency, good linearity and single photoelectron resolution. These characteristics can be considered really promising in view of the final application of the photodetector in the Positron Emission Tomography (PET).
96 citations
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TL;DR: In this article, a method to control carrier lifetime in silicon locally and efficiently is presented, based on transmission electron microscopy (TEM) measurements, which reveals the presence of two well defined trap levels, independent of void characteristics, at Ev+0.53 for holes and Ec−0.55 for electrons.
Abstract: A method to control carrier lifetime in silicon locally and efficiently is presented. Voids, formed by high dose He implants, have been characterized by transmission electron microscopy demonstrating they are well localized in depth within layers thinner than 100 nm while their lateral extent is limited only by the masking capability during He implantation. Deep level transient spectroscopy measurements, performed on diodes containing different void densities, revealed the presence of two well defined trap levels, independent of void characteristics, at Ev+0.53 for holes and Ec−0.55 for electrons. These characteristics make them ideal for lifetime control in reducing parasitic transistor gain. Gummel plots on transistors have shown that when voids are formed the gain decreases from 1 to 10−3. The other transistor characteristics are only slightly influenced by the presence of voids.
70 citations
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TL;DR: The Compact Muon Solenoid (CMS) detector at the Large Hadron Collider (LHC) at CERN as mentioned in this paper was designed to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1)
Abstract: The Compact Muon Solenoid (CMS) detector is described. The detector operates at the Large Hadron Collider (LHC) at CERN. It was conceived to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1) (10(27)cm(-2)s(-1)). At the core of the CMS detector sits a high-magnetic-field and large-bore superconducting solenoid surrounding an all-silicon pixel and strip tracker, a lead-tungstate scintillating-crystals electromagnetic calorimeter, and a brass-scintillator sampling hadron calorimeter. The iron yoke of the flux-return is instrumented with four stations of muon detectors covering most of the 4 pi solid angle. Forward sampling calorimeters extend the pseudo-rapidity coverage to high values (vertical bar eta vertical bar <= 5) assuring very good hermeticity. The overall dimensions of the CMS detector are a length of 21.6 m, a diameter of 14.6 m and a total weight of 12500 t.
5,193 citations
01 Jan 2016
TL;DR: As you may know, people have search numerous times for their chosen novels like this statistical parametric mapping the analysis of functional brain images, but end up in malicious downloads.
Abstract: Thank you very much for reading statistical parametric mapping the analysis of functional brain images. As you may know, people have search numerous times for their chosen novels like this statistical parametric mapping the analysis of functional brain images, but end up in malicious downloads. Rather than enjoying a good book with a cup of coffee in the afternoon, instead they cope with some infectious bugs inside their desktop computer.
1,719 citations
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TL;DR: Lang as discussed by the authors reviewed Lang's work in the Journal of Scientific Instruments (JSI) and Supplement No 1, 1951 Pp xvi + 388 + iii + 80 (London: Institute of Physics, 1951).
Abstract: Journal of Scientific Instruments Editor: Dr H R Lang Vol 28 and Supplement No 1, 1951 Pp xvi + 388 + iii + 80 (London: Institute of Physics, 1951) Bound, £3 12s; unbound, £3
725 citations
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TL;DR: In this article, the silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized and detailed descriptions of the pixel detector electronics and the silicon sensors are given.
Abstract: The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.
709 citations
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TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.
Abstract: This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.
607 citations