G
Giovanni Verzellesi
Researcher at University of Modena and Reggio Emilia
Publications - 222
Citations - 3935
Giovanni Verzellesi is an academic researcher from University of Modena and Reggio Emilia. The author has contributed to research in topics: Detector & High-electron-mobility transistor. The author has an hindex of 24, co-authored 210 publications receiving 3430 citations. Previous affiliations of Giovanni Verzellesi include University of Padua & University of Trento.
Papers
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Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
Journal ArticleDOI
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
Giovanni Verzellesi,Davide Saguatti,Matteo Meneghini,Francesco Bertazzi,Michele Goano,Gaudenzio Meneghesso,Enrico Zanoni +6 more
TL;DR: In this article, the authors classified and reviewed the physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes and remedies proposed for droop mitigation.
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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
Gaudenzio Meneghesso,Giovanni Verzellesi,R. Pierobon,Fabiana Rampazzo,Alessandro Chini,Umesh K. Mishra,C. Canali,Enrico Zanoni +7 more
TL;DR: In this paper, the authors investigated drain current dispersion effects in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements.
Journal ArticleDOI
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs
TL;DR: In this paper, an analysis of ON-state and OFF-state high-electric-field stress results for unpassivated GaN/AlGaN/GaN high-electron-mobility transistors on SiC substrates is presented.
Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.