Girija Shankar Sahoo

Bio: Girija Shankar Sahoo is an academic researcher from Siksha O Anusandhan University. The author has contributed to research in topics: Solar cell & Quantum efficiency. The author has an hindex of 8, co-authored 20 publications receiving 125 citations. Previous affiliations of Girija Shankar Sahoo include Aditya Engineering College & National Institute of Technology, Raipur.

Use of InGaAs/GaSb Quantum Ratchet in p-i-n GaAs Solar Cell for Voltage Preservation and Higher Conversion Efficiency

Abstract: The concept of intermediate band solar cell (IBSC) is evolved through the effective use of the below bandgap photons, so as to improve upon the existing Shockley–Queisser limit for single-junction solar cells (SCs). But there are many challenges with the IBSC, for which they are unable to achieve the theoretical maximum. One of the most important constraints is the increase in recombination rate (both radiative and nonradiative), which results in a significant reduction in open-circuit voltage. In this paper, an antimonide-based quantum photon ratchet SC is proposed, where an InGaAs/GaSb quantum ratchet band is introduced into the IBSC. It reduces the transmission losses effectively by decoupling the intermediate band (IB) from the valence band, thereby increasing the lifetime of charge carriers in the IB state leading to increase in the conversion efficiency over IBSC.

太阳电池器件物理 = Solar cell device physics

Abstract: There has been an enormous infusion of new ideas in the field of solar cells over the last 15 years; discourse on energy transfer has gotten much richer, and nanostructures and nanomaterials have revolutionized the possibilities for new technological developments. However, solar energy cannot become ubiquitous in the world's power markets unless it can become economically competitive with legacy generation methods such as fossil fuels. The new edition of Dr. Stephen Fonash's definitive text points the way toward greater efficiency and cheaper production by adding coverage of cutting-edge topics in plasmonics, multi-exiton generation processes, nanostructures and nanomaterials such as quantum dots. This book's new structure improves readability by shifting many detailed equations to appendices, and balances the first edition's semiconductor coverage with an emphasis on thin-films. Further, it now demonstrates physical principles with simulations in the well-known AMPS computer code developed by the author. This classic text is now updated with new advances in nanomaterials and thin films that point the way to cheaper, more efficient solar energy production and, many of the detailed equations from the first edition have been shifted to appendices in order to improve readability. It carries important theoretical points are now accompanied by concrete demonstrations via included simulations created with the well-known AMPS computer code.

Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped Si

Abstract: This paper examines a tunnel field-effect transistor (TFET) as a promising device for achieving steeper switching and better electrical performances in low-power operation. It features a double-gate TFET with vertical channel sandwiched by lightly doped Si (VS-TFET). The vertical tunnel junction is employed on the source side for the steeper subthreshold swing (SS) and for the higher ON-current ( ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) by restricting tunnel barrier width. The VS-TFET shows 17-mV/dec minimum SS and ${10}^{ {4}}~{ \mathrm{\scriptstyle ON}}/{ \mathrm{\scriptstyle OFF}}$ current ratio ( ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) for sub-0.7-V gate overdrive. In addition, the VS-TFET shows sub-60-mV/dec SS in a wide range of ${I}_{D}$ regardless of sweep directions. In conclusion, the work presented here demonstrates that the VS-TFET will be one of the most promising candidates for a next-generation low-power device.

TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors

Abstract: Tunnel field-effect transistors (TFETs) have promising structures for future ultrascaled devices thanks to their capability in reducing swing threshold and short channel effects. In this paper, Si-based L-shaped channel TFETs (LTFETs) with buried oxide layers subjected to heavy-ion irradiation are scrutinized using Technology Computer-Aided Design simulation for the first time. The effects of linear energy transfer and voltage bias on single-event effects (SEEs) are investigated. Results show that the peak value of drain current in LTFET reaches up to $2.59 \times 10^{-4}$ A at $10 ~\text {MeV}\cdot \text {cm}^{2}$ /mg, which is much higher than the on-state current at $V_{d} = 0.5$ V. Moreover, it indicates that LTFET is more sensitive to SEE than fully depleted silicon-on-insulator MOSFET with back-plane layer. Meanwhile, overall analysis shows that the charge collection process in LTFET device is mainly due to the drift–diffusion mechanism and the bipolar amplification effect can be eliminated. A part of the hole produced by ion strikes will diffuse from the body into the drain region and help reduce the duration of transient. Moreover, by simulating heavy-ion strike in the lateral and vertical channels in LTFETs, the tunneling junction was first confirmed as the most sensitive part of the TFET against heavy-ion impacts, where the highest electric field in the device is found. These findings give a new insight into the SEE in TFETs, which can provide guidelines for the future radiation-hardened applications for TFET-based circuits.

Periodic nanostructures: preparation, properties and applications

Abstract: Periodic nanostructures, a group of nanomaterials consisting of single or multiple nano units/components periodically arranged into ordered patterns (e.g., vertical and lateral superlattices), have attracted tremendous attention in recent years due to their extraordinary physical and chemical properties that offer a huge potential for a multitude of applications in energy conversion, electronic and optoelectronic applications. Recent advances in the preparation strategies of periodic nanostructures, including self-assembly, epitaxy, and exfoliation, have paved the way to rationally modulate their ferroelectricity, superconductivity, band gap and many other physical and chemical properties. For example, the recent discovery of superconductivity observed in "magic-angle" graphene superlattices has sparked intensive studies in new ways, creating superlattices in twisted 2D materials. Recent development in the various state-of-the-art preparations of periodic nanostructures has created many new ideas and findings, warranting a timely review. In this review, we discuss the current advances of periodic nanostructures, including their preparation strategies, property modulations and various applications.