Giuseppe Coppola

Bio: Giuseppe Coppola is an academic researcher from National Research Council. The author has contributed to research in topics: Digital holography & Holography. The author has an hindex of 40, co-authored 256 publications receiving 5489 citations. Previous affiliations of Giuseppe Coppola include Seconda Università degli Studi di Napoli & University of Naples Federico II.

Surface topography of microstructures in lithium niobate by digital holographic microscopy

Abstract: We report here on the application of digital holographic microscopy as a metrological tool for the inspection and the micro-topography reconstruction of different microstructures fabricated in bulk lithium niobate by differential etching of reversed ferroelectric domain patterned crystals. These structures have a range of applications in optical ridge waveguides, alignment structures, V-grooves, micro-tips and micro-cantilever beams and precise control of the surface quality and topography is required. The technique allows us to obtain digitally a high-fidelity surface topography description of the specimen with only one image acquisition allowing us to have relatively simple and compact set-ups able to give quantitative information on object morphology. The advantages of this technique compared to traditional microscopy are discussed.

Fast silicon-on-silicon optoelectronic router based on a BMFET device

Abstract: In this paper, a new configuration for an optoelectronic router is presented. The device is composed by a single-mode input waveguide, a two-mode active section where the light steering by means of mode mixing between the fundamental and the first higher order mode is achieved. A terminal Y-branch is placed to separate the output channels. Active modulation is achieved by means of a three-terminal electronic device, which injects and controls the free carrier plasma inside the active region. The usage of a three-terminal device allows extremely fast dynamic response. Switching times of few nanoseconds are obtained together with an average crosstalk of -11 dB.

Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device.

Abstract: Hydrogenated amorphous silicon (a-Si:H) has been already considered for the objective of passive optical elements, like waveguides and ring resonators, within photonic integrated circuits at λ = 1.55 μm. However the study of its electro-optical properties is still at an early stage, therefore this semiconductor in practice is not considered for light modulation as yet. We demonstrated, for the first time, effective electro-optical modulation in a reverse biased a-Si:H p-i-n waveguiding structure. In particular, phase modulation was studied in a waveguide integrated Fabry-Perot resonator in which the Vπ⋅Lπ product was determined to be 63 V⋅cm. Characteristic switch-on and switch-off times of 14 ns were measured. The device employed a wider gap amorphous silicon carbide (a-SiC:H) film for the lower cladding layer instead of silicon oxide. In this way the highest temperature involved in the fabrication process was 170°C, which ensured the desired technological compatibility with CMOS processes.

Phase map retrieval in digital holography: avoiding the undersampling effect by a lateral shear approach.

Abstract: In digital holography (DH) the numerical reconstruction of the whole wavefront allows one to extract the wrapped phase map mod, 2π. It can occur that the reconstructed wrapped phase map in the image plane is undersampled because of the limited pixel size in that plane. In such a case the phase distribution cannot be retrieved correctly by the usual unwrapping procedures. We show that the use of the digital lateral-shearing interferometry approach in DH provides the correct reconstruction of the phase map in the image plane, even in extreme cases where the phase profile changes very rapidly. We demonstrate the effectiveness of the method in a particular case where the profile of a highly curved silicon microelectromechanical system membrane has to be reconstructed.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Photonic crystals

Abstract: The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

Micrometre-scale silicon electro-optic modulator

Abstract: Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

Silicon optical modulators

Abstract: Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

Abstract: Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.