Giuseppe Coppola

Bio: Giuseppe Coppola is an academic researcher from National Research Council. The author has contributed to research in topics: Digital holography & Holography. The author has an hindex of 40, co-authored 256 publications receiving 5489 citations. Previous affiliations of Giuseppe Coppola include Seconda Università degli Studi di Napoli & University of Naples Federico II.

Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror

Abstract: We describe the operating principle of a silicon optoelectronic modulator based on the plasma dispersion effect used in conjunction with a distributed Bragg reflector, which converts the phase shift, in- duced by the free carriers injected by a P-i-N diode, into variations of its reflectivity. The device is integrated in a low-loss silicon-on-insulator waveguide. Two different approaches in the driving schemes are pro- posed. Moreover, we show how it is possible to reach a theoretical 100% modulation depth by exploiting in a concurrent way both the variations of the refractive index and the increased optical absorption. An exhaustive description of the optical structure and its guiding properties, together with the analysis of the electrical behavior of the modulator, is given. Finally, a comparison with other interferometric structures is analyzed, and it is shown how this kind of modulator exhibits satisfactory charac- teristics in terms of dissipated power and reduced occupation of area on a chip. © 2001 Society of Photo-Optical Instrumentation Engineers.

Miniaturizable Si-based electro-optical modulator working at 1.5 μm

Abstract: Optoelectronic devices are considered the innovative element for the next generation of microelectronic integrated circuits. For this purpose, both active and passive devices—extremely miniaturized—must be implemented. We fabricated and electro-optical Si-based light intensity modulator working at 1.5 μm using a bipolar mode field-effect transistor integrated within a Si rib waveguide. The principle of operation is the light absorption by a plasma of free carriers that can be opportunely moved inside or outside of the device optical channel by properly changing the control bias. The devices, only 100 μm long, were fabricated using epitaxial Si wafers and standard clean room processing. The optical characterization at 1.48 μm in static conditions shows a modulation of ∼90% while the dynamic electrical characterization provides a switching time of ≈10ns (foreseen modulation frequency of hundreds of MHz). A modulation depth above 25% is observed for modulation frequency up to 300 kHz.

Digital holography microscope as tool for microelectromechanical systems characterization and design

Abstract: Microelectromechanical systems (MEMS) are integrated microdevices or systems combining electrical and mechanical components that can sense, control, and actuate on the microscale and function individually or in arrays to generate effects on the macroscale. MEMS is one of the most promising areas in future computers and machinery, the next logical step in the silicon revolution. Fabricated using integrated circuit (IC)-compatible batch-processing technologies, the small size of MEMS opens a new line of exciting applications, including aerospace, automotive, biological, medical, fluidics, military, optics, and many other areas. We explore the potentialities of a high-resolution optical technique for characterizing MEMS microstructures. The method is based on the application of digital holography as a noncontact metrological tool for inspection and characterization of the microstructure surface morphology. The microstructures under investigation are homogeneous and bimorph polysilicon cantilevers; both structures exhibit an out-of-plane deformation owing to residual stress. The high sensitivity of the proposed method enables us to precisely determine the structure morphology and calculate the intrinsic stress and bending moment, in good agreement with an analytical model. Hence, the proposed technique can be exploited to assess the fabrication process and the functionality as well as the reliability of micromachined structures. Moreover, it is also used as a tuning tool for design and finite-element-based simulation software.

Digital holographic microscopy for the evaluation of human sperm structure.

Abstract: The morphology of the sperm head has often been correlated with the outcome of in vitro fertilization, and has been shown to be the sole parameter in semen of value in predicting the success of intracytoplasmic sperm injection and intracytoplasmic morphologically selected sperm injection. In this paper, we have studied whether digital holographic microscopy (DHM) may be useful to obtain quantitative data on human sperm head structure and compared this technique with high-power digitally enhanced Nomarski optics. The main advantage of digital holography is that high-resolution three-dimensional quantitative sample imaging may be automatically produced by numerical refocusing of a two-dimensional image at different object planes without any mechanical scanning. We show that DHM generates useful information on the dimensions and structure of human sperm, not revealed by conventional phase-contrast microscopy, in particular the volume of vacuoles, and suggest its use as an additional prognostic tool in assisted reproduction technology.

Characterization of MEMS structures by microscopic digital holography

Abstract: We propose the use of digital holography (DH) as a metrological tool for inspection and characterization of MEMS structures. We show that DH can be efficiently employed to assess the fabrication process of micro structures as well as to test their behaviour in operative conditions. DH allows reconstructing both the amplitude and phase of microscopic objects and, compared to traditional microscopy, it provides quantitative phase determination. We demonstrate that DH allows determination of full field deformation maps that can be compared with analytical and/or numerical models of the deformed microstructure. Application of DH on structures with several different geometries and shapes, like cantilever beams, bridges and membranes is reported and result will be discussed. Dimensions of the inspected microstructures ranging from 1 to 50µm. Examples of application are presented were DH allows determination with high accuracy out of plane deformations due to the residual stress introduced by the fabrication process. An optical set-up for recording digital holograms based on a Mach-Zehnder interferometer was adopted and a laser source which wavelength is =532 nm was employed. The light reflected by the object under investigation was made to interfere with a plane wave front. Holograms were recorded by a CCD array with 1024 x 1280 square pixels with 6.7 µm size. A mirror mounted on a piezo-actuator was inserted along the reference arm of the interferometric in order to introduce controlled phase steps and to employ phase shifting technique. This technique allows suppressing both the zeroth-order and the conjugate wave-front in the numerical holographic reconstruction process. A method for compensating numerically curvature of the wave front and introduced by the microscopic objective lens is proposed and discussed. Keywords: Digital Holography, Interferometry, MEMS characterization.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Photonic crystals

Abstract: The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

Micrometre-scale silicon electro-optic modulator

Abstract: Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

Silicon optical modulators

Abstract: Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

Abstract: Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.