Giuseppe Iannaccone

Bio: Giuseppe Iannaccone is an academic researcher from University of Pisa. The author has contributed to research in topics: Field-effect transistor & Graphene. The author has an hindex of 45, co-authored 378 publications receiving 10498 citations. Previous affiliations of Giuseppe Iannaccone include Istituto Nazionale di Fisica Nucleare & National Research Council.

Electronics based on two-dimensional materials

Abstract: The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Design criteria for the RF section of UHF and microwave passive RFID transponders

Abstract: A set of design criteria for the radio-frequency (RF) section of long-range passive RF identification (RFID) transponders operating in the 2.45-GHz or 868-MHz industrial, scientific, and medical (ISM) frequency ranges is derived in this paper, focusing in particular on the voltage multiplier, the power-matching network, and the backscatter modulation. The paper discusses the design tradeoffs between the error probability at the reader receiver and the converted RF-dc power at the transponder, determining the regions of the design space that allow optimization of the operating range and the data rate of the RFID system.

Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures

Abstract: Exploiting the properties of two-dimensional crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, the available printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive processing. In addition, none is suitable for thin-film heterostructure fabrication due to the re-mixing of different two-dimensional crystals leading to uncontrolled interfaces and poor device performance. Here, we show a general approach to achieve inkjet-printable, water-based, two-dimensional crystal formulations, which also provide optimal film formation for multi-stack fabrication. We show examples of all-inkjet-printed heterostructures, such as large-area arrays of photosensors on plastic and paper and programmable logic memory devices. Finally, in vitro dose-escalation cytotoxicity assays confirm the biocompatibility of the inks, extending their possible use to biomedical applications. Device fabrication can be realized via inkjet printing of water-based 2D crystals.

Simulation of Graphene Nanoribbon Field-Effect Transistors

Abstract: We present an atomistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR-FETs), based on the self consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight-binding Hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity to the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires prohibitive effective nanoribbon width of 1-2 nm and atomistic precision that could in principle be obtained with periodic etch patterns or stress patterns.

Performance of arsenene and antimonene double-gate MOSFETs from first principles

Abstract: In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels. The accuracy of first-principles approaches in describing electronic properties is combined with the efficiency of tight-binding Hamiltonians based on maximally localized Wannier functions to compute the transport properties of the devices. These simulations provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi's approximation, including spin-orbit and multi-valley effects, and demonstrate that ultra-scaled devices in the sub-10-nm scale show a performance that is compliant with industry requirements.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

2D metal carbides and nitrides (MXenes) for energy storage

Abstract: The family of 2D transition metal carbides, carbonitrides and nitrides (collectively referred to as MXenes) has expanded rapidly since the discovery of Ti3C2 in 2011. The materials reported so far always have surface terminations, such as hydroxyl, oxygen or fluorine, which impart hydrophilicity to their surfaces. About 20 different MXenes have been synthesized, and the structures and properties of dozens more have been theoretically predicted. The availability of solid solutions, the control of surface terminations and a recent discovery of multi-transition-metal layered MXenes offer the potential for synthesis of many new structures. The versatile chemistry of MXenes allows the tuning of properties for applications including energy storage, electromagnetic interference shielding, reinforcement for composites, water purification, gas- and biosensors, lubrication, and photo-, electro- and chemical catalysis. Attractive electronic, optical, plasmonic and thermoelectric properties have also been shown. In this Review, we present the synthesis, structure and properties of MXenes, as well as their energy storage and related applications, and an outlook for future research. More than twenty 2D carbides, nitrides and carbonitrides of transition metals (MXenes) have been synthesized and studied, and dozens more predicted to exist. Highly electrically conductive MXenes show promise in electrical energy storage, electromagnetic interference shielding, electrocatalysis, plasmonics and other applications.

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Abstract: Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocat...

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

Abstract: Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we present a detailed theoretical investigation of the atomic and electronic structure of few-layer black phosphorus (BP) to predict its electrical and optical properties. This system has a direct bandgap, tunable from 1.51 eV for a monolayer to 0.59 eV for a five-layer sample. We predict that the mobilities are hole-dominated, rather high and highly anisotropic. The monolayer is exceptional in having an extremely high hole mobility (of order 10,000 cm(2) V(-1) s(-1)) and anomalous elastic properties which reverse the anisotropy. Light absorption spectra indicate linear dichroism between perpendicular in-plane directions, which allows optical determination of the crystalline orientation and optical activation of the anisotropic transport properties. These results make few-layer BP a promising candidate for future electronics.