G
Giuseppe Iannaccone
Researcher at University of Pisa
Publications - 394
Citations - 12415
Giuseppe Iannaccone is an academic researcher from University of Pisa. The author has contributed to research in topics: Field-effect transistor & Graphene. The author has an hindex of 45, co-authored 378 publications receiving 10498 citations. Previous affiliations of Giuseppe Iannaccone include Istituto Nazionale di Fisica Nucleare & National Research Council.
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Quantum engineering of transistors based on 2D materials heterostructures
TL;DR: The outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability are analyzed.
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A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference
TL;DR: A voltage reference circuit operating with all transistors biased in weak inversion, providing a mean reference voltage of 257.5 mV, has been fabricated in 0.18 m CMOS technology with accurate subthreshold design.
Journal ArticleDOI
A Sub-1-V, 10 ppm/ $^{\circ}$ C, Nanopower Voltage Reference Generator
G. De Vita,Giuseppe Iannaccone +1 more
TL;DR: An extreme low power voltage reference generator operating with a supply voltage ranging from 0.9 to 4 V has been implemented in AMS 0.35-mum CMOS process, achieved as the combined effect of a perfect suppression of the temperature dependence of mobility and the compensation of the channel length modulation effect on the temperature coefficient.
Journal ArticleDOI
Quantum engineering of transistors based on 2D materials heterostructures
TL;DR: In this paper, the outlook and challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability are analyzed.
Journal ArticleDOI
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
TL;DR: In this paper, the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field effect transistors with double pulse measurements was investigated.