G
Giuseppe Iannaccone
Researcher at University of Pisa
Publications - 394
Citations - 12415
Giuseppe Iannaccone is an academic researcher from University of Pisa. The author has contributed to research in topics: Field-effect transistor & Graphene. The author has an hindex of 45, co-authored 378 publications receiving 10498 citations. Previous affiliations of Giuseppe Iannaccone include Istituto Nazionale di Fisica Nucleare & National Research Council.
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An energy case for hybrid datacenters
Byung-Gon Chun,Gianluca Iannaccone,Giuseppe Iannaccone,Randy H. Katz,Gunho Lee,Luca Niccolini +5 more
TL;DR: This work explores the potential of hybrid datacenter designs that mix low power platforms with high performance ones and shows how these designs can handle diverse workloads with different service level agreements in an energy efficient fashion.
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Enhanced shot noise in resonant tunneling : theory and experiment
TL;DR: In this paper, shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ''full'' shot noise.
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Electrical properties of graphene-metal contacts
Teresa Cusati,Gianluca Fiori,Amit Gahoi,Amit Gahoi,Vikram Passi,Vikram Passi,Max C. Lemme,Max C. Lemme,Alessandro Fortunelli,Giuseppe Iannaccone +9 more
TL;DR: This work shows that the contact resistance is intrinsically dependent on graphene sheet resistance and on the chemistry of the graphene-metal interface, and suggests ways to engineer contact resistance.
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Last-Meter Smart Grid Embedded in an Internet-of-Things Platform
TL;DR: The customer domain of the smart grid naturally blends with smart home and smart building systems, but typical proposed approaches are “distributor-centric” rather than “customer-centric,” undermining user acceptance, and are often poorly scalable.
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A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry
TL;DR: In this paper, the authors simulate the expected device performance and scaling perspectives of carbon nanotube (CNT) field effect transistors with doped source and drain extensions, based on the self-consistent solution of the three-dimensional Poisson-Schroumldinger equation with open boundary conditions, within the nonequilibrium Green's function formalism, where arbitrary gate geometry and device architecture can be considered.