G
Glen D. Wilk
Researcher at ASM International
Publications - 64
Citations - 5814
Glen D. Wilk is an academic researcher from ASM International. The author has contributed to research in topics: Silicon & Gate dielectric. The author has an hindex of 31, co-authored 64 publications receiving 5716 citations. Previous affiliations of Glen D. Wilk include Texas Instruments & Avago Technologies.
Papers
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Journal ArticleDOI
Hafnium and zirconium silicates for advanced gate dielectrics
TL;DR: In this article, a gate dielectric film with metal contents ranging from ∼3 to 30 at. % Hf and Zr has been investigated, and the results show that Hf exhibits excellent electrical properties and high thermal stability in direct contact with Si, while Al electrodes produce very good electrical properties, but also react with the silicates.
Journal ArticleDOI
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si.
Patent
Zirconium and/or hafnium oxynitride gate dielectric
TL;DR: In this paper, a field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed.
Journal ArticleDOI
Stable zirconium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: In this paper, the authors demonstrate an equivalent oxide thickness of about 21 A for a 50 A ZrSixOy film sputterdeposited directly on a Si substrate, as measured by capacitance-voltage techniques, with a hysteresis shift less than 10 mV.
Journal ArticleDOI
HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
Martin M. Frank,Glen D. Wilk,Dmitri Starodub,Torgny Gustafsson,Eric Garfunkel,Yves J. Chabal,J.L. Grazul,David A. Muller +7 more
TL;DR: In this paper, the authors have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition and showed that as-deposited films are continuous and predominantly amorphous.