G
Gregg H. Jessen
Researcher at Air Force Research Laboratory
Publications - 64
Citations - 4153
Gregg H. Jessen is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 26, co-authored 62 publications receiving 3116 citations. Previous affiliations of Gregg H. Jessen include BAE Systems & Wright-Patterson Air Force Base.
Papers
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Journal ArticleDOI
Guest Editorial: The dawn of gallium oxide microelectronics
Journal ArticleDOI
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
Andrew J. Green,Kelson D. Chabak,Eric R. Heller,Robert C. Fitch,M. Baldini,Andreas Fiedler,Klaus Irmscher,Günter Wagner,Zbigniew Galazka,Stephen E. Tetlak,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +12 more
TL;DR: In this article, a Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-Doped semi-insulating (100, β)-Ga 2O3 substrate.
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Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
Gregg H. Jessen,Robert C. Fitch,James K. Gillespie,Glen D. Via,Antonio Crespo,D. Langley,D.J. Denninghoff,M. Trejo,Eric R. Heller +8 more
TL;DR: In this paper, an empirically based physical model is presented to predict the expected extrinsic fT for many combinations of gate length and commonly used barrier layer thickness (tbar) on silicon nitride passivated T-gated AlGaN/GaN HEMTs.
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Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak,Neil Moser,Andrew J. Green,Dennis E. Walker,Stephen E. Tetlak,Eric R. Heller,Antonio Crespo,Robert C. Fitch,Jonathan McCandless,Kevin D. Leedy,M. Baldini,Günter Wagner,Zbigniew Galazka,Xiuling Li,Gregg H. Jessen +14 more
TL;DR: In this paper, a top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate was used to construct fin-array field effect transistors (finFETs).
Journal ArticleDOI
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang,Adam T. Neal,Zhanbo Xia,Chandan Joishi,Chandan Joishi,Jared M. Johnson,Yuanhua Zheng,Sanyam Bajaj,Mark Brenner,Donald L. Dorsey,Kelson D. Chabak,Gregg H. Jessen,Jinwoo Hwang,Shin Mou,Joseph P. Heremans,Siddharth Rajan +15 more
TL;DR: In this article, a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O 3 interface through modulation doping was demonstrated.