The surface science of titanium dioxide

Photoinduced reactivity of titanium dioxide

[Yang, Hua Gui; Sun, Cheng Hua; Qiao, Shi Zhang; Liu, Gang; Smith, Sean Campbell; Lu, Gao Qing] Univ Queensland, ARC Ctr Excellence Funct Nanomat, Sch Engn, Brisbane, Qld 4072, Australia. [Yang, Hua Gui; Sun, Cheng Hua; Qiao, Shi Zhang; Liu, Gang; Smith, Sean Campbell; Lu, Gao Qing] Univ Queensland, Australian Inst Bioengn & Nanotechnol, Ctr Computat Mol Sci, Brisbane, Qld 4072, Australia. [Zou, Jin] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia. [Zou, Jin] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia. [Liu, Gang; Cheng, Hui Ming] Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat sci, Shenyang 110016, Peoples R China.;Lu, GQ (reprint author), Univ Queensland, ARC Ctr Excellence Funct Nanomat, Sch Engn, Brisbane, Qld 4072, Australia;s.qiao@uq.edu.au maxlu@uq.edu.au

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Anatase TiO(2) single crystals with a large percentage of reactive facets

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

UV-Visible ار راد ن .د TiO2 ( تیفرظ راون مان هب نورتکلا یاراد یژرنا زارت لماش VB و ) رگید زارت ی یژرنا اب ( ییاناسر راون مان هب نورتکلا زا یلاخ و رتلااب VB یم ) .دشاب ت ود نیا نیب یژرنا توافت یژرنا فاکش زار ، پگ دناب هدیمان یم .دوش هک ینامز زا نورتکلا لاقتنا VB هب VB یم ماجنا دریگ ، TiO2 اب ودح یژرنا بذج د ev 2 / 3 ، نورتکلا تفج کی دیلوت یم هرفح .دیامن و نورتکلا هرفح ی نا اب هدش دیلوت یم کرتشم حطس هب لاقت ثعاب دناوت شنکاو ماجنا اه یی ددرگ . TiO2 دربراک ،دراد یدایز یاه هلمج زا یم ناوت اوه یگدولآ هیفصت یارب (CO2) و بآ و ... نآ زا هدافتسا درک .

Advanced Nanoarchitectures for Solar Photocatalytic Applications

A method for forming a conductive material on a substrate includes laser annealing a selected portion of a blanket coated material to form a conductive region.

System and method for forming conductive material on a substrate

A semiconductor device can include a channel including a first binary oxide and a second binary oxide.

Combined binary oxide semiconductor device

A method, comprising: depositing (142) a first material over at least a portion of a substrate (102) by use of one or more solution processes to form a first material layer (108), at least a portion of said first material layer (108) comprising inorganic dielectric material; depositing (146) a second material over and/or in contact with said at least a portion of said first material layer (108) by use of one or more solution processes to form a second material layer (108), at least a portion of said second material layer (108) comprising organic dielectric material, to form at least a portion of a dielectric device layer; and altering (144, 148) said at least a portion of said first and/or said second material layer (108) at least in part.

Method of forming a solution processed device

A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

The interaction of water and methanol with well-defined (1 × 1) terminated surfaces of anatase-TiO2(101) were investigated with temperature-programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS). For water, three desorption states were observed in the TPD spectra at 160, 190, and 250 K. The three desorption peaks were assigned to multilayer water, water adsorbed to 2-fold-coordinated O, and water adsorbed to 5-fold-coordinated Ti, respectively. The TPD spectra for methanol were more complicated. For methanol, five desorption peaks were observed in the TPD spectra at 135, 170, 260, 410, and 610 K. The five desorption peaks were assigned to multilayer methanol, methanol adsorbed to 2-fold-coordinated O, methanol adsorbed to 5-fold-coordinated Ti, methoxy adsorbed to 5-fold-coordinated Ti, and methoxy adsorbed to Ti at step edges, respectively. The XPS results indicated that the adsorbed water and methanol were predominantly bound to the surface in a molecular state, with no evidence for diss...

Gregory S. Herman

Papers

System and method for forming conductive material on a substrate

Combined binary oxide semiconductor device

Method of forming a solution processed device

A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

Experimental Investigation of the Interaction of Water and Methanol with Anatase−TiO2(101)