Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.

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The emergence of spin electronics in data storage

“Spintronics,” in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.

http://science.sciencemag.org/content/sci/309/5741/1688.full.pdf

Magnetic Domain-Wall Logic

An analyte monitor includes a sensor, a sensor control unit, and a display unit. The sensor has, for example, a substrate, a recessed channel formed in the substrate, and conductive material disposed in the recessed channel to form a working electrode. The sensor control unit typically has a housing adapted for placement on skin and is adapted to receive a portion of an electrochemical sensor. The sensor control unit also includes two or more conductive contacts disposed on the housing and configured for coupling to two or more contact pads on the sensor. A transmitter is disposed in the housing and coupled to the plurality of conductive contacts for transmitting data obtained using the sensor. The display unit has a receiver for receiving data transmitted by the transmitter of the sensor control unit and a display coupled to the receiver for displaying an indication of a level of an analyte. The analyte monitor may also be part of a drug delivery system to alter the level of the analyte based on the data obtained using the sensor.

Analyte Monitoring Device And Methods Of Use

Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and the antiferromagnetic element would not affect magnetically its neighbors no matter how densely the elements were arranged in a device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. The outstanding question is how to efficiently manipulate and detect the magnetic state of an antiferromagnet. In this article we give an overview of recent works addressing this question. We also review studies looking at merits of antiferromagnetic spintronics from a more general perspective of spin-ransport, magnetization dynamics, and materials research, and give a brief outlook of future research and applications of antiferromagnetic spintronics.

Antiferromagnetic spintronics

http://files.janapv.webnode.cz/200000097-8a03f8afdf/ex_bias_nano.pdf

Exchange bias in nanostructures

A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum2. The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented

A 4-Mb toggle MRAM based on a novel bit and switching method

We report the first demonstration of a magnetoresistive random access memory (MRAM) circuit incorporating MgO-based magnetic tunnel junction (MTJ) material for higher performance. We compare our results to those of AlOx-based devices, and we discuss the MTJ process optimization and material changes that made the demonstration possible.We present data on key MTJ material attributes for different oxidation processes and free-layer alloys, including resistance distributions, bias dependence, free-layer magnetic properties, interlayer coupling, breakdown voltage, and thermal endurance. A tunneling magnetoresistance (TMR) greater than 230% was achieved with CoFeB free layers and greater than 85% with NiFe free layers. Although the TMR with NiFe is at the low end of our MgO comparison, even this MTJ material enables faster access times, since its TMR is almost double that of a similar structure with an AlOx barrier. Bit-to-bit resistance distributions are somewhat wider for MgO barriers, with sigma about 1.5% compared to about 0.9% for AlOx. The read access time of our 4 Mb toggle MRAM circuit was reduced from 21 ns with AlOx to a circuit-limited 17 ns with MgO.

MgO-based tunnel junction material for high-speed toggle magnetic random access memory

A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.

Method of applying cladding material on conductive lines of MRAM devices

Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory.

Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions

An integrated circuit device ( 300 ) comprises a substrate ( 301 ) and MRAM architecture ( 314 ) formed on the substrate ( 308 ). The MRAM architecture ( 314 ) includes a MRAM circuit ( 318 ) formed on the substrate ( 301 ); and a MRAM cell ( 316 ) coupled to and formed above the MRAM circuit ( 318 ). Additionally a passive device ( 320 ) is formed in conjunction with the MRAM cell ( 316 ). The passive device ( 320 ) can be one or more resistors and one or more capacitor. The concurrent fabrication of the MRAM architecture ( 314 ) and the passive device ( 320 ) facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate ( 404, 504 ), resulting in three-dimensional integration.

Gregory W. Grynkewich

Papers

A 4-Mb toggle MRAM based on a novel bit and switching method

MgO-based tunnel junction material for high-speed toggle magnetic random access memory

Method of applying cladding material on conductive lines of MRAM devices

Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions

Passive elements in MRAM embedded integrated circuits