Guido Giuliani

Bio: Guido Giuliani is an academic researcher from University of Pavia. The author has contributed to research in topics: Semiconductor laser theory & Laser linewidth. The author has an hindex of 20, co-authored 117 publications receiving 3170 citations. Previous affiliations of Guido Giuliani include CSELT.

Laser diode self-mixing technique for sensing applications

Abstract: The laser diode self-mixing (or feedback) interferometric technique is reviewed as a general tool for remote sensing applications. The operating principle is outlined, and the attainable performance is compared to conventional coherent detection. Applications to metrology and to new sensing schemes are described, experimental results are reported and the overall performance of the sensors are assessed.

Laser diode feedback interferometer for measurement of displacements without ambiguity

Abstract: We report what, to our knowledge, is the first example of laser feedback interferometer capable of measuring displacements of arbitrary form using a single interferometric channel. With a GaAlAs laser diode we can measure 1.2-m displacements, with interferometric resolution, simply by means of the backreflection from the surface (reflective or diffusive) under test. The operation is performed at moderate (i.e., not very weak) levels of feedback, such that a two-level hysteresis is found in the amplitude modulated signal. This is shown to allow the recovery of displacement without sign ambiguity from a single interferometric signal. Experimental results are reported, which are found to be in good agreement with the underlying theory. Performances of the developed feedback interferometer are finally presented. >

Measurement of the linewidth enhancement factor of semiconductor lasers based on the optical feedback self-mixing effect

Abstract: A new method for the measurement of the linewidth enhancement factor of semiconductor lasers is presented, based on the interferometric self-mixing effect. It is a fast and easy to perform method that does not require radio frequency nor optical spectrum measurements. A small fraction of the emitted light is backreflected into the laser cavity by a remote target driven by a sine waveform. The mixing of the returned and the lasing fields generates a modulation of the optical output power in the form of an interferometric waveform, with a shape that depends on the optical feedback strength and the linewidth enhancement factor /spl alpha/, according to the well-known Lang-Kobayashi theory. We show that the value of /spl alpha/ can be retrieved from a simple measurement of two characteristic time intervals of the interferometric waveform. Experimental results obtained on different laser diodes show an accuracy of /spl plusmn/6.5%.

Operating regimes of GaAs-AlGaAs semiconductor ring lasers: experiment and model

Abstract: Theory and experiments of single-mode ridge waveguide GaAs-AlGaAs semiconductor ring lasers are presented. The lasers are found to operate bidirectionally up to twice the threshold, where unidirectional operation starts. Bidirectional operation reveals that just above threshold, the lasers operate in a regime where the two counterpropagating modes are continuous wave. As the injected current is increased, a new regime appears where the intensities of the two counterpropagating modes undergo alternate sinusoidal oscillations with frequency in the tens of megahertz range. The regime with alternate oscillations was previously observed in ring lasers of the gas and dye type, and it is here reported and investigated in semiconductor ring lasers. A theoretical model based on a mean field approach for the two counterpropagating modes is proposed to study the semiconductor ring laser dynamics. Numerical results are in agreement with the regime sequence experimentally observed when the injected current is increased (i.e., bidirectional continuous-wave, bidirectional with alternate oscillations, unidirectional). The boundaries of the different regimes are studied as a function of the relevant parameters, which turn out to be the pump current and the conservative and dissipative scattering coefficients, responsible for an explicit linear coupling between the two counterpropagating field modes. By a fitting procedure, we obtain good numerical agreement between experiment and theory, and also an estimation for the otherwise unknown scattering parameters.

Self-mixing laser diode velocimetry: application to vibration and velocity measurement

Abstract: A review of recent experimental and theoretical results concerning laser diode self-mixing velocimetry is presented, showing that this technique can be deployed to measure velocity and vibration of solid targets with an extremely simple optical setup. This technique reduces optical alignment problems and achieves results comparable to those obtained by the conventional laser Doppler velocimetry (LDV) approach. It is demonstrated that the self-mixing signal can be processed to recover the target velocity and vibration by applying the same analysis method used for LDV. An optimal signal processing method is then proposed to recover the target velocity with good accuracy, also in the presence of relevant speckle disturbance. Application to the measurement of sub-micron vibrations is also demonstrated, using a self-mixing vibrometer instrument capable of 5-nm accuracy. As an example, the characterization of response and hysteresis of piezoceramic transducers (PZTs) is carried out. These results illustrate the effectiveness of the self-mixing technique in the field of laser velocimetry, opening the way to new applications where compactness and low cost of the measuring apparatus are essential.

The Quantum Theory of Light

Abstract: (b) Write out the equations for the time dependence of ρ11, ρ22, ρ12 and ρ21 assuming that a light field interaction V = -μ12Ee iωt + c.c. couples only levels |1> and |2>, and that the excited levels exhibit spontaneous decay. (8 marks) (c) Under steady-state conditions, find the ratio of populations in states |2> and |3>. (3 marks) (d) Find the slowly varying amplitude ̃ ρ 12 of the polarization ρ12 = ̃ ρ 12e iωt . (6 marks) (e) In the limiting case that no decay is possible from intermediate level |3>, what is the ground state population ρ11(∞)? (2 marks) 2. (15 marks total) In a 2-level atom system subjected to a strong field, dressed states are created in the form |D1(n)> = sin θ |1,n> + cos θ |2,n-1> |D2(n)> = cos θ |1,n> sin θ |2,n-1>

Imaging with terahertz radiation

Abstract: Within the last several years, the field of terahertz science and technology has changed dramatically. Many new advances in the technology for generation, manipulation, and detection of terahertz radiation have revolutionized the field. Much of this interest has been inspired by the promise of valuable new applications for terahertz imaging and sensing. Among a long list of proposed uses, one finds compelling needs such as security screening and quality control, as well as whimsical notions such as counting the almonds in a bar of chocolate. This list has grown in parallel with the development of new technologies and new paradigms for imaging and sensing. Many of these proposed applications exploit the unique capabilities of terahertz radiation to penetrate common packaging materials and provide spectroscopic information about the materials within. Several of the techniques used for terahertz imaging have been borrowed from other, more well established fields such as x-ray computed tomography and synthetic aperture radar. Others have been developed exclusively for the terahertz field, and have no analogies in other portions of the spectrum. This review provides a comprehensive description of the various techniques which have been employed for terahertz image formation, as well as discussing numerous examples which illustrate the many exciting potential uses for these emerging technologies.

Laser diode self-mixing technique for sensing applications

Abstract: The laser diode self-mixing (or feedback) interferometric technique is reviewed as a general tool for remote sensing applications. The operating principle is outlined, and the attainable performance is compared to conventional coherent detection. Applications to metrology and to new sensing schemes are described, experimental results are reported and the overall performance of the sensors are assessed.

Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit.

Abstract: A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuous-wave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI). The InP-based microdisk has a diameter of 7.5 mum and a thickness of 1 mum. A tunnel junction was incorporated to efficiently contact the p-side of the pn-junction. The laser emits at 1.6 mum, with a threshold current as low as 0.5 mA under continuous-wave operation at room temperature, and a threshold voltage of 1.65 V. The SOI-coupled laser slope efficiency was estimated to be 30 muW/mA, with a maximum unidirectional output power of 10 muW.

III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects

Abstract: In this paper III-V on silicon-on-insulator (SOI) het- erogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter-chip and intra-chip optical interconnects. Two bonding technologies are used to realize the III-V/SOI integration: one based on molecular wafer bonding and the other based on DVS- BCB adhesive wafer bonding. The realization of micro-disk lasers, Fabry-Perot lasers, DFB lasers, DBR lasers and mode- locked lasers on the III-V/SOI material platform is discussed. Artist impression of a multi-wavelength laser based on micro- disk cavities realized on a III-V/SOI heterogeneous platform and a microscope image of a realized structure.