G
Guilhem Boissier
Researcher at University of Montpellier
Publications - 67
Citations - 1034
Guilhem Boissier is an academic researcher from University of Montpellier. The author has contributed to research in topics: Laser & Quantum well. The author has an hindex of 19, co-authored 60 publications receiving 942 citations. Previous affiliations of Guilhem Boissier include Centre national de la recherche scientifique.
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Journal ArticleDOI
Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers
A. Le Bris,A. Le Bris,Laurent Lombez,Laurent Lombez,S. Laribi,S. Laribi,Guilhem Boissier,Philippe Christol,Jean-François Guillemoles,Jean-François Guillemoles +9 more
TL;DR: In this article, GaSb-based heterostructures are tested as candidates for a hot carrier solar cell absorber and their thermalisation properties are investigated using continuous wave photoluminescence.
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High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 [micro sign]m
D.A. Yarekha,G. Glastre,A. Perona,Yves Rouillard,Frédéric Genty,E.M. Skouri,Guilhem Boissier,Pierre Grech,André Joullié,C. Alibert,Alexei N. Baranov +10 more
TL;DR: In this paper, a GaInSbAs/GaAlSbA quantum well (QW) laser was fabricated for continuous wave (CW) operation at temperatures up to 130/spl deg/C. The CW threshold current varied between 20 and 35 mA at room temperature (RT) and exhibited single longitudinal mode emission over a wide range of CW operation conditions.
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Sb-based monolithic VCSEL operating near 2.2 [micro sign]m at room temperature
TL;DR: In this paper, a monolithic Sb-based vertical cavity surface emitting laser (VCSEL) operating near 2.2 /spl mu/m at room temperature has been successfully fabricated and characterised.
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Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 μm wavelength range around room temperature
L. Naehle,Sofiane Belahsene,M. von Edlinger,M. Fischer,Guilhem Boissier,Pierre Grech,G. Narcy,Aurore Vicet,Yves Rouillard,J. Koeth,L. Worschech +10 more
TL;DR: In this paper, a distributed feedback (DFB) laser diodes based on the concept of lateral metal gratings fabricated on type-I quantum well GaInAsSb/AlGaInSb material are presented.
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Quantum cascade lasers grown on silicon
Alexei N. Baranov,H. Nguyen-Van,Zeineb Loghmari,Laurent Cerutti,Jean-Baptiste Rodriguez,Julie Tournet,G. Narcy,Guilhem Boissier,Gilles Patriarche,Eric Tournié,Roland Teissier +10 more
TL;DR: The first quantum cascade lasers (QCLs) directly grown on a silicon substrate exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate, and open the way to the development of a wide variety of integrated sensors.