Gunnar Malm

Bio: Gunnar Malm is an academic researcher from Royal Institute of Technology. The author has contributed to research in topics: Silicon on insulator & Grating. The author has an hindex of 9, co-authored 23 publications receiving 424 citations.

Mutually synchronized bottom-up multi-nanocontact spin–torque oscillators

Abstract: Spin-torque oscillators offer a unique combination of nanosize, ultrafast modulation rates and ultrawide band signal generation from 100 MHz to close to 100 GHz. However, their low output power and large phase noise still limit their applicability to fundamental studies of spin-transfer torque and magnetodynamic phenomena. A possible solution to both problems is the spin-wave-mediated mutual synchronization of multiple spin-torque oscillators through a shared excited ferromagnetic layer. To date, synchronization of high-frequency spin-torque oscillators has only been achieved for two nanocontacts. As fabrication using expensive top-down lithography processes is not readily available to many groups, attempts to synchronize a large number of nanocontacts have been all but abandoned. Here we present an alternative, simple and cost-effective bottom-up method to realize large ensembles of synchronized nanocontact spin-torque oscillators. We demonstrate mutual synchronization of three high-frequency nanocontact spin-torque oscillators and pairwise synchronization in devices with four and five nanocontacts. © 2013 Macmillan Publishers Limited. All rights reserved.

High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

Abstract: Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a controlled etching into the epitaxially grown p-doped anode layer to reach an optimum dopant dose of ~ 1.2 times 1013 cm-2 in the junction termination extension (JTE). Electroluminescence revealed a localized avalanche breakdown that is in good agreement with device simulation. A comparison of diodes with single- and double-zone etched JTEs shows a higher breakdown voltage and a less sensitivity to varying processing conditions for diodes with a two-zone JTE.

Direct observation and imaging of a spin-wave soliton with p-like symmetry

Abstract: The prediction and realization of magnetic excitations driven by electrical currents via the spin transfer torque effect, enables novel magnetic nano-devices where spin-waves can be used to process ...

SB-MOSFETs in UTB-SOI Featuring PtSi Source/Drain With Dopant Segregation

Abstract: MOSFETs of both polarities with PtSi-based Schottky-barrier source/drain (S/D) have been fabricated in ultrathin-body Si-on-insulator. The PtSi is formed in the S/D regions without lateral silicide growth under the gate spacers. This design leads to a 30-nm underlap between the PtSi-Si contacts and the gate edges resulting in low drive currents. Despite the underlap, excellent performance is achieved for both types of MOSFETs with large drive currents and low leakage by means of dopant segregation through As and B implantation into the PtSi followed by drive-in annealing at low temperatures.

Carrier transport through a dry-etched InP-based two-dimensional photonic crystal

Abstract: The electrical conduction across a two-dimensional photonic crystal (PhC) fabricated by Ar/Cl-2 chemically assisted ion beam etching in n-doped InP is influenced by the surface potential of the hol ...

Interface-induced phenomena in magnetism

Abstract: This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

The 2014 Magnetism Roadmap

Abstract: Magnetism is a very fascinating and dynamic field Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new products Applications such as hard disk drives and magnetic sensors are part of our daily life, and new applications, such as in non-volatile computer random access memory, are expected to surface shortly Thus it is timely for describing the current status, and current and future challenges in the form of a Roadmap article This 2014 Magnetism Roadmap provides a view on several selected, currently very active innovative developments It consists of 12 sections, each written by an expert in the field and addressing a specific subject, with strong emphasize on future potential This Roadmap cannot cover the entire field We have selected several highly relevant areas without attempting to provide a full review - a future update will have room for more topics The scope covers mostly nano-magnetic phenomena and applications, where surfaces and interfaces provide additional functionality New developments in fundamental topics such as interacting nano-elements, novel magnon-based spintronics concepts, spin-orbit torques and spin-caloric phenomena are addressed New materials, such as organic magnetic materials and permanent magnets are covered New applications are presented such as nano-magnetic logic, non-local and domain-wall based devices, heat-assisted magnetic recording, magnetic random access memory, and applications in biotechnology May the Roadmap serve as a guideline for future emerging research directions in modern magnetism

The 2017 Magnetism Roadmap

Abstract: Building upon the success and relevance of the 2014 Magnetism Roadmap, this 2017 Magnetism Roadmap edition follows a similar general layout, even if its focus is naturally shifted, and a different group of experts and, thus, viewpoints are being collected and presented. More importantly, key developments have changed the research landscape in very relevant ways, so that a novel view onto some of the most crucial developments is warranted, and thus, this 2017 Magnetism Roadmap article is a timely endeavour. The change in landscape is hereby not exclusively scientific, but also reflects the magnetism related industrial application portfolio. Specifically, Hard Disk Drive technology, which still dominates digital storage and will continue to do so for many years, if not decades, has now limited its footprint in the scientific and research community, whereas significantly growing interest in magnetism and magnetic materials in relation to energy applications is noticeable, and other technological fields are emerging as well. Also, more and more work is occurring in which complex topologies of magnetically ordered states are being explored, hereby aiming at a technological utilization of the very theoretical concepts that were recognised by the 2016 Nobel Prize in Physics. Given this somewhat shifted scenario, it seemed appropriate to select topics for this Roadmap article that represent the three core pillars of magnetism, namely magnetic materials, magnetic phenomena and associated characterization techniques, as well as applications of magnetism. While many of the contributions in this Roadmap have clearly overlapping relevance in all three fields, their relative focus is mostly associated to one of the three pillars. In this way, the interconnecting roles of having suitable magnetic materials, understanding (and being able to characterize) the underlying physics of their behaviour and utilizing them for applications and devices is well illustrated, thus giving an accurate snapshot of the world of magnetism in 2017. The article consists of 14 sections, each written by an expert in the field and addressing a specific subject on two pages. Evidently, the depth at which each contribution can describe the subject matter is limited and a full review of their statuses, advances, challenges and perspectives cannot be fully accomplished. Also, magnetism, as a vibrant research field, is too diverse, so that a number of areas will not be adequately represented here, leaving space for further Roadmap editions in the future. However, this 2017 Magnetism Roadmap article can provide a frame that will enable the reader to judge where each subject and magnetism research field stands overall today and which directions it might take in the foreseeable future. The first material focused pillar of the 2017 Magnetism Roadmap contains five articles, which address the questions of atomic scale confinement, 2D, curved and topological magnetic materials, as well as materials exhibiting unconventional magnetic phase transitions. The second pillar also has five contributions, which are devoted to advances in magnetic characterization, magneto-optics and magneto-plasmonics, ultrafast magnetization dynamics and magnonic transport. The final and application focused pillar has four contributions, which present non-volatile memory technology, antiferromagnetic spintronics, as well as magnet technology for energy and bio-related applications. As a whole, the 2017 Magnetism Roadmap article, just as with its 2014 predecessor, is intended to act as a reference point and guideline for emerging research directions in modern magnetism.

Spin-Torque and Spin-Hall Nano-Oscillators

Abstract: This paper reviews the state of the art in spin-torque and spin-Hall-effect-driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the potential for these oscillators in a wide range of applications, from microwave signal sources and detectors to neuromorphic computation elements, is discussed together with the specific electronic circuitry that has so far been designed to harness this potential.

Long-range mutual synchronization of spin Hall nano-oscillators

Abstract: The spin Hall effect in a non-magnetic metal with spin-orbit coupling injects transverse spin currents into adjacent magnetic layers, where the resulting spin transfer torque can drive spin wave au ...