G
Günter Wagner
Researcher at Institut für Kristallzüchtung
Publications - 54
Citations - 2383
Günter Wagner is an academic researcher from Institut für Kristallzüchtung. The author has contributed to research in topics: Silicon & Epitaxy. The author has an hindex of 19, co-authored 54 publications receiving 1819 citations.
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Journal ArticleDOI
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
Andrew J. Green,Kelson D. Chabak,Eric R. Heller,Robert C. Fitch,M. Baldini,Andreas Fiedler,Klaus Irmscher,Günter Wagner,Zbigniew Galazka,Stephen E. Tetlak,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +12 more
TL;DR: In this article, a Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-Doped semi-insulating (100, β)-Ga 2O3 substrate.
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Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak,Neil Moser,Andrew J. Green,Dennis E. Walker,Stephen E. Tetlak,Eric R. Heller,Antonio Crespo,Robert C. Fitch,Jonathan McCandless,Kevin D. Leedy,M. Baldini,Günter Wagner,Zbigniew Galazka,Xiuling Li,Gregg H. Jessen +14 more
TL;DR: In this paper, a top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate was used to construct fin-array field effect transistors (finFETs).
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$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
Andrew J. Green,Kelson D. Chabak,M. Baldini,Neil Moser,Ryan Gilbert,Robert C. Fitch,Günter Wagner,Zbigniew Galazka,Jonathan Mccandless,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +11 more
TL;DR: Preliminary results indicate potential for monolithic or heterogeneous integration of power switch and RF devices using inline-formula LaTeX, as well as power gain, efficiency, and power-added efficiency of 0.23 W/mm, 5.1 dB, and 6.3%.
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Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
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Recent progress in the growth of β-Ga2O3 for power electronics applications
TL;DR: In this article, a review article focuses on the growth of bulk and homoepitaxial β-Ga2O3, summarizing the research work carried out in this field and pointing out the strengths and the main challenges of different growth techniques.