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Author

Guo-Qiang Lo

Other affiliations: Singapore Science Park
Bio: Guo-Qiang Lo is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Silicon photonics & Responsivity. The author has an hindex of 40, co-authored 148 publications receiving 5043 citations. Previous affiliations of Guo-Qiang Lo include Singapore Science Park.

Papers published on a yearly basis

Papers
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Journal ArticleDOI
TL;DR: In this article, a dye-sensitized solar cell (DSSC) using a ZnO-nanoflower film photoanode, which was grown by a hydrothermal method at 95°C.
Abstract: In this letter, the authors report a dye-sensitized solar cell (DSSC) using a ZnO-nanoflower film photoanode, which was grown by a hydrothermal method at 95°C. The dye used was cis-bis(isothiocyanato)bis(2,2′-bipyridyl-4,4′-dicarboxylato)-ruthenium(II) bis-tetrabutylam-monium (N-719). At AM1.5G irradiation with 100mW∕cm2 light intensity, the DSSC based on ZnO-nanoflower film showed an energy conversion efficiency of 1.9%, which is much higher compared to that (1.0%) of the control device constructed using a photoanode of upstanding ZnO-nanorod array fabricated by hydrothermal method as well. The better performance of ZnO-nanoflower DSSC was due to a better dye loading and light harvesting of the ZnO-nanoflower film. The results demonstrate potential application of ZnO-nanoflower array for efficient dye-sensitized solar cells.

509 citations

Journal ArticleDOI
TL;DR: In this paper, a low-thermal-budget postepitaxy anneal was introduced to improve the performance of the Ge photodetectors, thus resulting in significantly improved dark current.
Abstract: Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (V ? L ? = 2.56 V·cm, 10 Gb/s). Low-voltage operation (V RF = 1 V pp) was also demonstrated. Introducing a low-thermal-budget postepitaxy anneal improves the performance of the Ge photodetectors, thus resulting in significantly improved dark current. The responsivity and speed in the low-voltage regime are also enhanced, which enhances low-voltage or even short-circuit (V Bias = 0 V) operation.

275 citations

Journal ArticleDOI
TL;DR: In this paper, the authors presented a vertical gate-all-around silicon nanowire transistor on bulk silicon wafer utilizing fully CMOS compatible technology, which achieved high aspect ratio (up to 50: 1) vertical nanowires with diameter ~20 nm.
Abstract: This letter presents a vertical gate-all-around silicon nanowire transistor on bulk silicon wafer utilizing fully CMOS compatible technology. High aspect ratio (up to 50: 1) vertical nanowires with diameter ~20 nm are achieved from lithography and dry-etch defined Si-pillars with subsequent oxidation. The surrounding gate length is controlled using etch back of the sacrificial oxide. N-MOS devices thus fabricated with gate length ~150 nm showed excellent transistor characteristics with large drive current (1.0 times 103 muA/mum), high Ion/Ioff ratio (~107), good subthreshold slope (~80 mV/dec) and low drain-induced barrier lowering (~10 mV/V). Along with good electrical characteristics, the use of low cost bulk wafers, and simple gate definition process steps could make this device a suitable candidate for next generation technology nodes.

221 citations

Journal ArticleDOI
TL;DR: In this article, a label-free Mach-Zehnder interferometer (MZI) biosensor based on a silicon nitride slot waveguide was proposed for the detection and quantification of the methylation of DAPK (deathassociated protein kinase ) gene.
Abstract: We demonstrate a highly sensitive label-free Mach–Zehnder interferometer (MZI) biosensor based on silicon nitride slot waveguide. Unlike the conventional MZI sensors, the sensing arm of the sensor consists of a slot waveguide while the reference arm consists of a strip waveguide. Thanks to the slot waveguide's property to provide high optical intensity in a subwavelength-size low refractive index region (slot region), which allows high light–analyte interaction, higher sensitivity can be obtained as compared to conventional waveguides using the slot waveguide as sensing region. The bulk refractive index sensitivity of the slot waveguide MZI sensor was found to be 1864 π /RIU (refractive index unit) with 7 mm long slot waveguide sensing arm, which shows higher sensitivity compared to the conventional MZI device based on silicon nitride. The biosensing capability of the developed slot waveguide MZI was investigated using biotin–streptavidin binding as a model system. The sensitivity of the system was demonstrated down to 18.9 fM or 1 pg/ml of streptavidin solution and to the best of our knowledge, it is the best reported experimental value for the limit of detection of a MZI sensor. Furthermore, we investigated the specific detection and quantification of the methylation of DAPK ( Death-associated protein kinase ) gene, which is a widely used biomarker for human cancers. We have shown that methylation sequences of DAPK gene of various methylation densities (100%, 50%, and 0% of methylation sites) can be quantified and discriminated even at a concentration as low as 1 fmol/μl or 1 nM.

202 citations

Journal ArticleDOI
TL;DR: The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.
Abstract: Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.

164 citations


Cited by
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Journal ArticleDOI
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Abstract: Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

2,110 citations

Journal ArticleDOI
TL;DR: In this article, a review of recent developments in the use of ZnO nanostructures for dye-sensitized solar cell (DSC) applications is presented.
Abstract: This Review focuses on recent developments in the use of ZnO nanostructures for dye-sensitized solar cell (DSC) applications. It is shown that carefully designed and fabricated nanostructured ZnO films are advantageous for use as a DSC photoelectrode as they offer larger surface areas than bulk film material, direct electron pathways, or effective light-scattering centers, and, when combined with TiO2, produce a core–shell structure that reduces the combination rate. The limitations of ZnO-based DSCs are also discussed and several possible methods are proposed so as to expand the knowledge of ZnO to TiO2, motivating further improvement in the power-conversion efficiency of DSCs.

1,627 citations

Journal ArticleDOI
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
Abstract: The past decade has seen rapid progress in research into high-performance Ge-on-Si photodetectors. Owing to their excellent optoelectronic properties, which include high responsivity from visible to near-infrared wavelengths, high bandwidths and compatibility with silicon complementary metal–oxide–semiconductor circuits, these devices can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and infrared imaging at low cost and low power consumption. This Review summarizes the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors. Owing to their excellent optoelectronic properties, Ge-on-Si photodetector can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and low-cost infrared imaging at low power consumption. This Review covers the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors.

1,259 citations

Journal ArticleDOI
TL;DR: A comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods can be found in this paper, where the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, position-controlled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronics, and energy harvesting devices.
Abstract: One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, position-controlled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

1,247 citations

Journal ArticleDOI
TL;DR: Inverted polymer solar cells with the ZnO-C60 cathode display markedly improved power conversion efficiency compared to those with a pristine ZNO cathode, especially when the active layer includes the low-bandgap polymer PTB7-Th.
Abstract: Modification of a ZnO cathode by doping it with a hydroxyl-containing derivative - giving a ZnO-C60 cathode - provides a fullerene-derivative-rich surface and enhanced electron conduction. Inverted polymer solar cells with the ZnO-C60 cathode display markedly improved power conversion efficiency compared to those with a pristine ZnO cathode, especially when the active layer includes the low-bandgap polymer PTB7-Th.

1,099 citations