Gyeong Su Park

Bio: Gyeong Su Park is an academic researcher from Samsung. The author has contributed to research in topics: Electron energy loss spectroscopy & Band gap. The author has an hindex of 14, co-authored 34 publications receiving 1060 citations. Previous affiliations of Gyeong Su Park include Seoul National University.

Comprehensive defect suppression in perovskite nanocrystals for high-efficiency light-emitting diodes

Abstract: Electroluminescence efficiencies of metal halide perovskite nanocrystals (PNCs) are limited by a lack of material strategies that can both suppress the formation of defects and enhance the charge carrier confinement. Here we report a one-dopant alloying strategy that generates smaller, monodisperse colloidal particles (confining electrons and holes, and boosting radiative recombination) with fewer surface defects (reducing non-radiative recombination). Doping of guanidinium into formamidinium lead bromide PNCs yields limited bulk solubility while creating an entropy-stabilized phase in the PNCs and leading to smaller PNCs with more carrier confinement. The extra guanidinium segregates to the surface and stabilizes the undercoordinated sites. Furthermore, a surface-stabilizing 1,3,5-tris(bromomethyl)-2,4,6-triethylbenzene was applied as a bromide vacancy healing agent. The result is highly efficient PNC-based light-emitting diodes that have current efficiency of 108 cd A−1 (external quantum efficiency of 23.4%), which rises to 205 cd A−1 (external quantum efficiency of 45.5%) with a hemispherical lens. Guanidinium doping is shown to enhance the operation of perovskite nanocrystal light-emitting diodes.

In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory.

Abstract: Traditional charge-based memory technologies are approaching miniaturization limits as it becomes increasingly diffi cult to reliably retain suffi cient electrons in shrinking cells. [ 1 ] The capability of storing multi-bit information in a memory element without sacrifi cing scalability is one of the most important criteria that emerging memory technologies should fulfi ll. Resistive switching memories utilizing resistance change rather than charge storage have attracted considerable attention as potential alternatives to traditional charge-based memories. The phenomenon of resistive switching is based on the electrically induced change in the resistance state, observed in a variety of metal–insulator–metal structures. [ 1–21 ] Various resistive memories including solid electrolyte memories have displayed the capability of multilevel switching. [ 2–9 ] In spite of the great potential, however, the development of such devices has been delayed, largely because of the incomplete understanding of the switching mechanism and the physical structure for securing multilevel operation in nanometer-scale memory devices. Furthermore, the architectural innovation based on the switching property and fabrication process of each memory cell is required in order to overcome the limitations of conventional (FLASH) and other types of memory systems (PRAM (Phase-Change Random Access Memory), [ 22 ] MRAM (Magnetic Random Access Memory) [ 23 ] ) Here, we report in situ observation of voltage-induced changes in the microstructure of a solid electrolyte memory, revealing that the multilevel switching originates from the growth of multiple conducting fi laments with nanometer-sized diameter and spacing. Furthermore, we show that the main factor to determine the switching polarity is not electrode asymmetry but the non-uniform distribution of metal

Discovery of abnormal lithium-storage sites in molybdenum dioxide electrodes

Abstract: Developing electrode materials with high-energy densities is important for the development of lithium-ion batteries. Here, we demonstrate a mesoporous molybdenum dioxide material with abnormal lithium-storage sites, which exhibits a discharge capacity of 1,814 mAh g(-1) for the first cycle, more than twice its theoretical value, and maintains its initial capacity after 50 cycles. Contrary to previous reports, we find that a mechanism for the high and reversible lithium-storage capacity of the mesoporous molybdenum dioxide electrode is not based on a conversion reaction. Insight into the electrochemical results, obtained by in situ X-ray absorption, scanning transmission electron microscopy analysis combined with electron energy loss spectroscopy and computational modelling indicates that the nanoscale pore engineering of this transition metal oxide enables an unexpected electrochemical mass storage reaction mechanism, and may provide a strategy for the design of cation storage materials for battery systems.

Modeling the electrical resistivity of polymer composites with segregated structures

Abstract: Hybrid carbon nanotube composites with two different types of fillers have attracted considerable attention for various advantages. The incorporation of micro-scale secondary fillers creates an excluded volume that leads to the increase in the electrical conductivity. By contrast, nano-scale secondary fillers shows a conflicting behavior of the decreased electrical conductivity with micro-scale secondary fillers. Although several attempts have been made in theoretical modeling of secondary-filler composites, the knowledge about how the electrical conductivity depends on the dimension of secondary fillers was not fully understood. This work aims at comprehensive understanding of the size effect of secondary particulate fillers on the electrical conductivity, via the combination of Voronoi geometry induced from Swiss cheese models and the underlying percolation theory. This indicates a transition in the impact of the excluded volume, i.e., the adjustment of the electrical conductivity was measured in cooperation with loading of second fillers with different sizes. Carbon nanotube–polymer composites containing secondary fillers are thought to possess enhanced electrical and mechanical properties. Here the authors combine Monte Carlo calculations with resistivity experiments to study the effect of filler size and shape on electrical conductivity.

Iodide management in formamidinium-lead-halide–based perovskite layers for efficient solar cells

Abstract: The formation of a dense and uniform thin layer on the substrates is crucial for the fabrication of high-performance perovskite solar cells (PSCs) containing formamidinium with multiple cations and mixed halide anions. The concentration of defect states, which reduce a cell’s performance by decreasing the open-circuit voltage and short-circuit current density, needs to be as low as possible. We show that the introduction of additional iodide ions into the organic cation solution, which are used to form the perovskite layers through an intramolecular exchanging process, decreases the concentration of deep-level defects. The defect-engineered thin perovskite layers enable the fabrication of PSCs with a certified power conversion efficiency of 22.1% in small cells and 19.7% in 1-square-centimeter cells.

Phase Change Memory

Abstract: In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Abstract: This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMs

Phase-change memory

Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.