Author
H. Bernstein
Bio: H. Bernstein is an academic researcher. The author has contributed to research in topics: Diffusion (business) & Grain boundary diffusion coefficient. The author has an hindex of 1, co-authored 1 publications receiving 22 citations.
Papers
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TL;DR: In this paper, the diffusion of phosphorus from the vapor phase into single crystal silicon has been studied in terms of a two-layer diffusion model, leading to the determination of a diffusion constant for phosphorus in the oxide.
Abstract: The diffusion of phosphorus from the vapor phase into single crystal silicon has been studied. The experimental data are analyzed in terms of a two‐layer diffusion model, leading to the determination of a diffusion constant for phosphorus in the oxide. The resulting diffusion constant at 1150°C is found to be 2.1×10−15 cm/sec2 with an activation energy of 1.4 ev.
22 citations
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TL;DR: In this paper, the diffusion of gallium into silicon through an oxide layer was studied by a p-n junction technique, and the two-boundary diffusion model was estimated to be 5.3 × 10−11 cm 2 sec (√D = 4·4 μ √hr ) at 1100°C and 1.7 × 10 −9 cm 2sec (∆D) = 25.5 μ ∆hr ) in 1250°C.
45 citations
TL;DR: In this paper, a tunnel oxide layer was used to improve the performance of a high-efficiency silicon solar cell based on the full back surface field (BSF) in terms of open-circuit voltage (V oc ).
45 citations
NEC1
TL;DR: In this paper, the diffusion coefficient of boron and phosphorus in thermally grown SiO2 from a doped polycrystalline Si source has been found to be dependent on drive-in ambients and to be especially fast in an H2 ambient.
Abstract: The diffusion of boron and phosphorus into thermally grown SiO2 from a doped polycrystalline Si source has been found to be dependent on drive-in ambients and to be especially fast in an H2 ambient. Diffusion coefficients have been calculated by the two boundary diffusion model. It was found that the diffusion coefficient of boron in SiO2 is about two orders of magnitude larger than that of phosphorus. This fact is very important for Si gate processes. For P-channel Si gate transistors, boron diffused in the gate SiO2 film from the doped polycrystalline Si gate electrode causes new types of instabilities in transistor characteristics.
40 citations
TL;DR: In this paper, the diffusion of ion-implanted Ga in SiO2 by means of Rutherford backscattering spectrometry was studied and the doping of Si from a Ga•implanted siO2 layer was also investigated.
Abstract: We studied the diffusion of ion‐implanted Ga in SiO2 by means of Rutherford backscattering spectrometry. We also investigated the doping of Si from a Ga‐implanted SiO2 layer. It turned out that Ga occurs in three different chemical states in SiO2. In one chemical form it is virtually immobile, which we relate to Ga‐on‐Si sites in the network. A second type of Ga exhibits a very high diffusion coefficient. We have found that the formation of this type of Ga occurs by the same mechanism under almost all of the experimental circumstances. An interstitial GaOH molecule is proposed to be the diffusing species in this case. Finally, there is a third form in which Ga diffuses independently of the other diffusing species. The higher activation energy of this diffusion process suggests the diffusion of gallium in some substitutional form.
30 citations
TL;DR: In this paper, the authors model the insulator/semiconductor interface formation during chemical vapor deposition (CVD) of SiO 2 and SiON onto InP and GaAs; it deals primarily with the chemical nature of the interface as a result of the CVD and not with the electronic properties of the interfaces.
22 citations