H. C. Ong

Bio: H. C. Ong is an academic researcher. The author has contributed to research in topics: Cathodoluminescence & Photoluminescence. The author has an hindex of 1, co-authored 1 publications receiving 958 citations.

Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films

Abstract: Photoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity. Experimental results and spectral analyses suggest that the mechanism responsible for the green (yellow) emission is the recombination of a delocalized electron close to the conduction band with a deeply trapped hole in the single ionized oxygen vacancy Vo+ (the single negatively charged interstitial oxygen ion Oi−) center in the particle.

ZnO : From basics towards applications

Abstract: Several hundred thousands of tons of ZnO are used by per year, e.g. as an additive to concrete or to rubber. In the field of optoelectronics, ZnO holds promises as a material for a blue/UV optoelectronics, alternatively to GaN, as a cheap, transparent, conducting oxide, as a material for electronic circuits, which are transparent in the visible or for semiconductor spintronics. The main problem is presently, however, a high, reproducible and stable p-doping. We review in this contribution partly critically the material growth, fundamental properties of ZnO and of ZnO-based nanostructures, doping as well as present and future applications, with emphasis on the electronic and optical properties including stimulated emission. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

ZnO: Material, Physics and Applications

Abstract: ZnO is presently experiencing a research boom with more than 2000 ZnO-related publications in 2005. This phenomenon is triggered, for example, by hope to use ZnO as a material for blue/UV optoelectronics as an alternative to GaN, as a cheap, transparent, conducting oxide, as a material for electronic circuits that are transparent in the visible or for semiconductor spintronics. Currently, however, the main problem is to achieve high, reproducible and stable p-doping. Herein, we critically review aspects of the material growth, fundamental properties of ZnO and ZnO-based nanostructures and doping as well as present and future applications with emphasis on the electronic and optical properties including stimulated emission.

A comparative analysis of deep level emission in ZnO layers deposited by various methods

Abstract: This study examined the origin of visible luminescence from ZnO layers deposited on p-Si substrates by various growth methods using temperature dependent photoluminescence measurements. The deep level emissions of ZnO layers are found to be strongly dependent on the growth conditions and growth methods used. For the samples grown by sputtering, the visible emission consisted of violet, green, and orange-red regions, which corresponded to zinc interstitial (Zni), oxygen vacancy (VO), and oxygen interstitial (Oi) defect levels, respectively. In contrast, the deep level emissions of metal organic chemical vapor deposition grown samples consisted of blue and green emissions and blue and orange-red emissions at low and high oxygen flow rates, respectively. The ZnO nanorods synthesized by thermal evaporation showed a dominant deep level emission at the green region, which is associated with oxygen vacancies (VO).

Growth mechanism and properties of ZnO nanorods synthesized by plasma-enhanced chemical vapor deposition

Abstract: Uniformly distributed ZnO nanorods have been grown by plasma-enhanced chemical vapor deposition using a two-step process. By controlling the oxygen content in the gas mixture during the nucleation and growth steps, no catalyst is required for the formation of ZnO nanorods. High-resolution transmission electron microscopy studies show that ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. Alignment of these nanorods with respect to the substrates depends on the lattice mismatch between ZnO and the substrate, the surface electric field, and the amount of defects in the starting nuclei. Room-temperature photoluminescence measurements of these ZnO nanorods have shown ultraviolet peaks at 380 nm with a full width at half-maximum of 106 meV, which are comparable to those found in high-quality ZnO films. Photoluminescence measurements of annealed ZnO nanorods in hydrogen and oxygen atmospheres indicate that the origins of green emission are oxygen vacancies and zinc inter...

Defect emissions in ZnO nanostructures

Abstract: Defects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions.