H.C. Pant

Bio: H.C. Pant is an academic researcher from Bhabha Atomic Research Centre. The author has contributed to research in topics: Materials science & Chemical engineering. The author has an hindex of 3, co-authored 3 publications receiving 211 citations.

Studies on conductivity and dielectric properties of polyaniline-zinc sulphide composites

Abstract: In the present paper, we report electrical conductivity and dielectric studies on the composites of conducting polyaniline (PANI) with crystalline semiconducting ZnS powder, wherein PANI has been taken as inclusion and ZnS crystallites as the host matrix. From the studies, it has been observed that the value of room temperature d.c. conductivity of the composites with volume fraction of PANI > 0.65 shows an unusual behaviour wherein, conductivity values of the composites exceed that of PANI itself with maximum value as high as 6 times that of PANI at the volume fraction of 0.85. A similar trend has also been observed for the real and imaginary parts of complex dielectric constant values of the composites. This unusual behaviour in the d.c. conductivity and dielectric properties has been attributed to the enhancement in the degree of crystallinity of PANI as a consequence of its interfacial interaction with ZnS matrix. The results of optical microscopy show coating of PANI all around the ZnS particles. The temperature dependent conductivity studies suggest the quasi one-dimensional VRH conduction in PANI as well as its composites with ZnS. FTIR and XRD studies have also been reported.

Equation of state of condensed matter in laser-induced high-pressure regime

Abstract: We have simulated the shock Hugoniot of copper and uranium based on the results of first principles electronic structure calculations. The room temperature isotherm has been obtained by evaluating the accurate ground state total energies at various compressions, and the thermal and electronic excitation contributions were obtained by adopting isotropic models using the results obtained by the band structure calculations. Our calculations ensure smooth consideration of pressure ionization effects as the relevant core states are treated in the semi-core form at the ambient pressure. The pressure variation of the electronic Gruneisen parameter was estimated for copper using the band structure results, which leads to good agreement of the simulated shock Hugoniot with the measured shock data. The simulation results obtained for U are also compared with the experimental data available in literature and with our own data.

Thin-Film Organic Electronic Devices

Abstract: We review recently published advancements in thin-film organic devices, ranging from the composition and properties of organic materials to be used in devices, to the applications of devices, with special emphasis on thin-film transistors, diodes, and chemical sensors. We present exemplary materials used in each kind of device, outline the physical mechanisms behind the functioning of the devices, and discuss the most advanced capabilities of the devices and device assemblies. Advantages to the selection of organic and polymeric materials, future prospects, and challenges for organic-based electronics are also considered.