H. Greenhouse

Bio: H. Greenhouse is an academic researcher from Bendix Corporation. The author has contributed to research in topics: Kinetic inductance & Derivation of self inductance. The author has an hindex of 1, co-authored 2 publications receiving 979 citations.

Design of Planar Rectangular Microelectronic Inductors

Abstract: Negative mutual inductance results from coupling between two conductors having current vectors in opposite directions As a quantity in electronic circuits, negative mutual inductance is usually so much smaller in magnitude than overall inductance that it can be neglected with little effect In the microelectronic world, however, its neglect can result in inductance values as much as 30 percent too high This paper derives inductance equations for planar thin- or thick-film coils, comparing equations that include negative mutual inductance with those that do not It describes a computer program developed for calculating inductances for both square and rectangular geometries, the variables considered being track width, space between tracks, and number of turns Graphic results are presented for up to 16 turns over an inductance range of 3 nanohenries to 10 microhenries Although details of fabrication are not included, the effects of film thickness and frequency on the mutual-inductance parameter are discussed

Design of Temperature-Controlled Substrates for Hybrid Microcircuits

Abstract: This paper deals in depth with the criteria that govern the design of temperature-controlled substrates for hybrid microcircuits. Pertinent thermal parameters for the more important microcircuit-fabrication materials are presented in tabular form, along with several useful unit-conversion factors. Substrate heat losses due to conduction, convection, and radiation are then analyzed, and equations are developed for determining optimum substrate temperature, steady-state input power, and warm-up characteristics. Control-circuit design is discussed, and consideration is given to power dissipation by circuitry off as well as on the substrate. The effects of changes in ambient temperature on temperature-controlled-microcircuit performance are analyzed. Two applications of this technology are described.

Simple accurate expressions for planar spiral inductances

Abstract: We present several new simple and accurate expressions for the DC inductance of square, hexagonal, octagonal, and circular spiral inductors. We evaluate the accuracy of our expressions, as well as several previously published inductance expressions, in two ways: by comparison with three-dimensional field solver predictions and by comparison with our own measurements, and also previously published measurements. Our simple expression matches the field solver inductance values typically within around 3%, about an order of magnitude better than the previously published expressions, which have typical errors ground 20% (or more). Comparison with measured values gives similar results: our expressions (and, indeed, the field solver results) match within around 5%, compared to errors of around 20% for the previously published expressions. (We believe most of the additional errors in the comparison to published measured values is due to the variety of experimental conditions under which the inductance was measured.) Our simple expressions are accurate enough for design and optimization of inductors or of circuits incorporating inductors. Indeed, since inductor tolerance is typically on the order of several percent, "more accurate" expressions are not really needed in practice.

On-chip spiral inductors with patterned ground shields for Si-based RF ICs

Abstract: This paper presents a patterned ground shield inserted between an on-chip spiral inductor and silicon substrate. The patterned ground shield can be realized in standard silicon technologies without additional processing steps. The impacts of shield resistance and pattern on inductance, parasitic resistances and capacitances, and quality factor are studied extensively. Experimental results show that a polysilicon patterned ground shield achieves the most improvement. At 1-2 GHz, the addition of the shield increases the inductor quality factor up to 33% and reduces the substrate coupling between two adjacent inductors by as much as 25 dB. We also demonstrate that the quality factor of a 2-GHz LC tank can be nearly doubled with a shielded inductor.

Physical modeling of spiral inductors on silicon

Abstract: This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance.

Monolithic transformers for silicon RF IC design

Abstract: A comprehensive review of the electrical performance of passive transformers fabricated in silicon IC technology is presented. Two types of transformer construction are considered in detail, and the characteristics of two-port (1:1 and 1:n turns ratio) and multiport transformers (i.e., baluns) are presented from both computer simulation and experimental measurements. The effects of parasitics and imperfect coupling between transformer windings are outlined from the circuit point of view. Resonant tuning is shown to reduce the losses between input and output at the expense of operating bandwidth. A procedure for estimating the size of a monolithic transformer to meet a given specification is outlined, and circuit examples are used to illustrate the applications of the monolithic transformer in RF ICs.

On-chip Spiral Inductors With Patterned Ground Shields For Si-based RF IC's

Abstract: This paper presents a patterned ground shield in- serted between an on-chip spiral inductor and silicon substrate. The patterned ground shield can be realized in standard silicon technologies without additional processing steps. The impacts of shield resistance and pattern on inductance, parasitic resistances and capacitances, and quality factor are studied extensively. Experimental results show that a polysilicon patterned ground shield achieves the most improvement. At 1-2 GHz, the addition of the shield increases the inductor quality factor up to 33% and reduces the substrate coupling between two adjacent inductors by as much as 25 dB. We also demonstrate that the quality factor of a 2-GHz tank can be nearly doubled with a shielded inductor. In this paper, we present a patterned ground shield, which is compatible with standard silicon technologies, to reduce the unwanted substrate effects. To provide some background, Section II presents a discussion on the fundamental definitions of an inductor and an tank . Next, a physical model for spiral inductors on silicon is described. The magnetic energy storage and loss mechanisms in an on-chip inductor are discussed. Based on this insight, it is shown that energy loss can be reduced by shielding the electric field of the inductor from the silicon substrate. Then, the drawbacks of a solid ground shield are analyzed. This leads to the design of a patterned ground shield. Design guidelines for parameters such as shield pattern and resistance are given. In Section III, experiment design, on-wafer testing technique, and parasitic extraction procedure are presented. Experimental results are then reported to study the effects of shield resistance and pattern on inductance, parasitic resistances and capacitances, and inductor . Next, the improvement in of a 2-GHz tank using a shielded inductor is illustrated. A study of the noise coupling between two adjacent inductors and the efficiency of the ground shield for isolation are also presented. Lastly, Section IV gives some conclusions.