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H. I. Elsaeedy

Bio: H. I. Elsaeedy is an academic researcher from King Khalid University. The author has contributed to research in topics: Thin film & Irradiation. The author has an hindex of 5, co-authored 13 publications receiving 48 citations.

Papers
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TL;DR: In this paper, the authors used the ultrasound irradiation to assist the sol-gel method for the synthesis of spinel ZnCexFe2−−xO4 nanoparticles.
Abstract: Herein, we used the ultrasound irradiation to assist the sol–gel method for the synthesis of spinel ZnCexFe2 − xO4 nanoparticles. The patterns obtained from energy dispersive x-rays (EDX) analysis and elements mapping demonstrate the appropriate elemental stoichiometry and spatial distribution in the prepared samples. The Rietveld refinement patterns revealed the successful synthesis of the cubic-structured ZnFe2 − xCexO4 without any secondary phases. The crystallite size of ZnFe2 − xCexO4 ranged from 7 to 11 nm. Also, the optical bandgap for ZnFe2 − xCexO4 decreased from 2.1 eV to 1.77 eV. Electron paramagnetic resonance (EPR) spectroscopy was used to study the ferromagnetic resonance (FMR) characteristics of the ZnFe2 − xCexO4 samples. The resonance field was increased from 3362.65 Gauss to 3401.76 Gauss, while the line width decreased from 598.90 to 455.72 Gauss. The saturation magnetization was enhanced from 2.43 emu/g for x = 0.00 to 9.38 emu/g for x = 0.02. In addition, the values of coercivity (Hc) and remanence magnetization (Mr) were significantly lowered. The great value of saturation magnetization together with low values of Hc and Mr of Ce3+-substituted Zn ferrites makes them potential candidates for the microwave absorption field.

30 citations

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TL;DR: In this paper, the effect of the thickness of the ZnSe film on the performance of the CdTe solar cell was investigated using XRD patterns, and it was observed that the crystallite size increases as the film thickness increases, but the lattice strain decreases.
Abstract: In this framework, the ZnSe layer was prepared via the well-known thermal evaporation method at various thicknesses. The thicknesses of the ZnSe layer were monitored by the quartz crystal monitor type (FTM4, Edwards). The influence of ZnSe film’s thickness on the structure, optical and electrical properties were studied. Using XRD patterns, the structural parameters of the ZnSe layer have been calculated. It is observed that the crystallite size increases as the film thickness increases, but the lattice strain decreases. SEM measurement results show that as the thickness of the ZnSe film increases, the grain size improves. The electrical properties of ZnSe films at various thicknesses have been measured via a standard four-point probe method. It can be noticed that as the ZnSe film’s thickness increases, the electrical conductivity also increases. This means that ZnSe film with higher electrical conductivity will be more suitable for the high-efficiency ZnSe/CdTe solar cell. In a higher absorption region for both T (λ) and R (λ), the absorption coefficient has been determined, and thus the optical energy gap, which is increased from 2.62 to 2.91 eV. At the same time, the effect of the ZnSe layer with different thicknesses on the performance of the ZnSe/CdTe solar cell was discussed. The figure of merit has been computed to determine the quality of the thin films. The parameters of the hetero-junction have been measured, such as the correction ratio, which is improved by increasing the film’s thickness. The junction resistance and parasitic resistance were also calculated which is decreased with increasing of the thickness film, thereby improving the performance of fabricated ZnSe/CdTe solar cell.

24 citations

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TL;DR: In this paper, the main structural characteristics of Se80S20 were checked utilizing EDAX, X-ray, and SEM measurements using the common melt quenching method.

18 citations

Journal ArticleDOI
TL;DR: In this article, the structural characterization of the sprayed Cu2NiSnS4 thin films was examined by the FE-SEM and XRD techniques, and the optical properties of the films were estimated with different thickness.
Abstract: Earth-abundant Kesterite materials are very important to fabricate low-cost solar cells. Here, good quality Cu2NiSnS4 (CNSS) thin films were successively manufactured on a glass substrate at 350 °C using a simple spray pyrolysis system. The structural characterization of the sprayed Cu2NiSnS4 thin films was examined by the FE-SEM and XRD techniques. X-ray diffraction patterns indicate that the sprayed Cu2NiSnS4 films are single phase and having polycrystalline structure. The elemental composition analysis of the sprayed Cu2NiSnS4 thin films confirmed that the Cu2NiSnS4 film is near stoichiometric in compound. Our optical observations indicate that the refractive index (n) of the sprayed Cu2NiSnS4 films was increased by increasing the film thickness. Moreover, the sprayed Cu2NiSnS4 films exhibit a direct optical transition and the magnitudes of the energy gap have been decreased from 1.28 to 1.14 eV with the increase of thickness. The optoelectrical parameters of the Cu2NiSnS4 films, like optical conductivity, optical mobility, optical resistivity, optical carrier concentration and relaxation time were estimated with different thickness. Additionally, the nonlinear optical parameters of the Cu2NiSnS4 films were estimated. The fabricated CNSS/n-Si heterojunction achieved a conversion efficiency of 11.34%.

17 citations

Journal ArticleDOI
TL;DR: In this paper, the impact of gamma irradiation with different doses on structural, ferromagnetic resonance, optical, and dispersion properties of PVC/Mn0.5Zn 0.4 nanocomposite films was revealed.

11 citations


Cited by
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Journal ArticleDOI
I.M. El Radaf1
TL;DR: In this article, the effect of thickness on the skin depth, absorption coefficient, linear refractive index n, and static refractive no of the Cu2ZnGeSe4 thin films was studied.
Abstract: Good quality copper zinc germanium selenide (Cu2ZnGeSe4) thin films were grown via thermal evaporation procedure with different thicknesses (261, 379, and 486 nm). The analysis of the X-ray diffraction examination of the Cu2ZnGeSe4 thin films demonstrates that the as-deposited Cu2ZnGeSe4 thin films are polycrystalline with a single-phase tetragonal structure. The elemental composition analysis of the evaporated Cu2ZnGeSe4 thin film established that the as-deposited film is near stoichiometric in the compound. The optical study on the Cu2ZnGeSe4 thin films displayed that the Cu2ZnGeSe4 films exhibited a direct allowed optical transition and by increasing the thickness the magnitudes of the direct bandgap were decreased from 1.47 to 1.31 eV while the Urbach energy increased. The effect of thickness on the skin depth δ, absorption coefficient , linear refractive index n, and the static refractive index no of the Cu2ZnGeSe4 thin films was studied. The analysis of the nonlinear optical parameters of the Cu2ZnGeSe4 thin films reveals the increase of the film thickness combined with increase in the nonlinear refractive index.

38 citations

Journal ArticleDOI
TL;DR: In this article, the authors present the synthesis of good quality CuGaGeSe4 thin films of different thicknesses using electron beam deposition on well pre-cleaned glass substrates X-ray diffraction patterns displayed the amorphous nature of as-prepared CuGeGeSe 4 thin films, which can be successfully used as absorption layers in thin-film solar cells.
Abstract: The authors in this article present the synthesis of good quality CuGaGeSe4 thin films of different thicknesses using electron beam deposition on well pre-cleaned glass substrates X-ray diffraction patterns displayed the amorphous nature of as-prepared CuGaGeSe4 thin films In addition, the elemental compositional analysis of these films was examined by the energy-dispersive X-ray spectroscopy technique, which showed that there is good matching between the selected and detected percentages Transmittance and reflectance spectra of these CuGaGeSe4 samples were measured to experimentally determine the absorption coefficient and some related optical parameters Optical band-gap energy values of samples were determined via Tauc’s Plots; they are arisen owing to the indirect allowed transition They are decreased from 143 to 129 eV by increasing the film thickness from 250 to 445 nm The skin depth, absorption index, and refractive index of CuGaGeSe4 thin films were also obtained and extensively studied As well as, some optoelectrical parameters of these investigated films were discussed, like optical resistivity, optical mobility, optical conductivity, the lattice dielectric constant, and the ratio of the charge carrier concentrations to the effective mass (Nopt/m*) Along with, some nonlinear optical parameters of CuGaGeSe4 films were studied employing Miller’s formulas The values of the dispersion energy, static refractive index, the static dielectric constant, the oscillator strength and others increase, while the oscillator energy and the relaxation time decrease as the film thickness increased The obtained results showed that these CuGaGeSe4 film samples can be successfully used as absorption layers in thin-film solar cells

37 citations

Journal ArticleDOI
TL;DR: The PANi/Ag/MoS2/LiCo 0.5Fe2O4 photocatalyst showed an excellent photocatalytic efficiency against bisphenol A (82% removal efficiency) and displayed an exceptional antimicrobial potential towards pathogenic microbes as discussed by the authors.

35 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the physical properties of CFTS thin films by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), Energy dispersive Xray Spectroscopy (EDS), spectrophotometer and Hall Effect.
Abstract: Quaternary chalcogenide Cu2FeSnS4 (CFTS) thin layers have been grown by spray pyrolysis technique on glass substrates using different substrate temperatures (Ts = 160, 200, 240 and 280 °C). Physical properties of CFTS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS), spectrophotometer and Hall Effect. All results suggest that CFTS thin film synthesized at Ts = 240 °C has the best physical properties. XRD indicates an enhancement of crystalline quality of stannite CFTS elaborated at Ts = 240 °C with a maximum grain size about 45 nm and Raman spectroscopy confirms the purity phase of optimum sample. At Ts = 240 °C, atomic ratios of Cu/Fe/Sn/S were close to the theoretical ratios 2/1/1/4 and SEM images illustrates that the surface of the film is covered from a large number of micro-aggregates with spherical form. It is found that energy band gap and absorption coefficient values were about 1.46 eV and 9.8 104 cm−1 respectively at Ts = 240 °C. Hall Effect measurements revealed that electrical resistivity of optimum sample decreased to 0.18 Ωcm. Thus, all experimental results demonstrate that CFTS thin film grown at Ts = 240 °C can be considered as a promising absorber material in solar cell devices. A higher photodegradation rate of MB was about 81% under sun light for 4 h which indicates that optimum CFTS thin film grown at Ts = 240 °C would be a cheaper alternative catalyst to replace TiO2 in photocatalysis applications.

33 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of Ag-doping on the structural, optical, optoelectronic, dielectric, transport, and other parameters of ZnO was investigated.

27 citations