H. L'Haridon

Bio: H. L'Haridon is an academic researcher from CNET. The author has contributed to research in topics: Photoluminescence & Erbium. The author has an hindex of 6, co-authored 17 publications receiving 501 citations.

Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

Abstract: Luminescence of erbium implanted in various semiconductors such as Si, InP, GaAs, AlGaAs, GaInAsP, ZnTe and CdS is presented. The Er/sup 3+/ emission wavelength is the same for all these semiconductors with a bandgap energy greater than the intrashell transition energy of Er 4f electrons (0.805 eV). The Er/sup 3+/ emission intensity depends strongly on both the bandgap energy of the host semiconductor and the material temperature. To obtain an intense room temperature emission, a wide-gap semiconductor must be used.

N-channel MISFETs on semi-insulating InP for logic applications

Abstract: N-channel enhancement and depletion mode MISFETs have been fabricated on the same Fe-doped semi-insulating wafer. Their electrical characteristics are reported, along with some comparison with MISFETs processed on a silicon substrate with the same mark set.

Nondiffusion and 1.54 μm luminescence of erbium implanted in InP

Abstract: Erbium impurities were implanted in indium phosphide. The Er depth distributions are given for nonannealed and annealed substrates. It is shown that erbium has a very small diffusion coefficient, if any, in InP. The photoluminescence spectra show, after annealing at high temperature, the main erbium emission centred at 1.536μm. This emission is stronger after annealing at 700°C. Our results are the first evidence showing l.54μm emission at room temperature.

Open ampoule diffusion in InP

Abstract: We describe a new diffusion process to obtain Zn-doped p+-InP layers in an open ampoule in a PH3/H2 atmosphere. Using this process, we are able to control the diffusion and to realise planar and abrupt junctions while conserving the mirror-like InP surface.

Growth of Al:Er:O alloys on silicon

Abstract: Evaporation, implantation and annealing techniques are combined to realise a new ternary material AlxEryOz on silicon. The layer composition as well as the interaction of the different elements with the substrate are analysed by Rutherford backscattering and SIMS techniques. SEM and photoluminescence measurements reveal that the 1.54 μm emission could be caused by the microparticles doped with Er which present a composition close to that of a garnet one.

Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

Abstract: A review is presented of the fabrication, operation, and applications of rare-earth-doped GaN electroluminescent devices (ELDs). GaN:RE ELDs emit light due to impact excitation of the rare earth (RE) ions by hot carriers followed by radiative RE relaxation. By appropriately choosing the RE dopant, narrow linewidth emission can be obtained at selected wavelengths from the ultraviolet to the infrared. The deposition of GaN:RE layers is carried out by solid-source molecular beam epitaxy, and a plasma N/sub 2/ source. Growth mechanisms and optimization of the GaN layers for RE emission are discussed based on RE concentration, growth temperature, and V/III ratio. The fabrication processes and electrical models for both dc- and ac-biased devices are discussed, along with techniques for multicolor integration. Visible emission at red, green, and blue wavelengths from GaN doped with Eu, Er, and Tm has led to the development of flat-panel display (FPD) devices. The brightness characteristics of thick dielectric EL (TDEL) display devices are reviewed as a function of bias, frequency, and time. High contrast TDEL devices using a black dielectric are presented. The fabrication and operation of FPD prototypes are described. Infrared emission at 1.5 /spl mu/m from GaN:Er ELDs has been applied to optical telecommunications devices. The fabrication of GaN channel waveguides by inductively coupled plasma etching is also reviewed, along with waveguide optical characterization.

Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

Abstract: As discussed in the accompanying articles in this issue of MRS Bulletin, the optical properties of rare-earth (RE) elements have led to many important photonic applications, including solid-state lasers, components for telecommunications (optical-fiber amplifiers, fiber lasers), optical storage devices, and displays. In most of these applications, the host materials for the RE elements are various forms of oxide and nonoxide glasses. The emission can occur at visible or infrared (IR) wavelengths, depending on the electronic transitions of the selected RE element and the excitation mechanism. Until recently, the study of semiconductors doped with RE elements such as Pr and Er has concentrated primarily on the lowest excited state as an optically active transition. The presence of transitions at IR wavelengths (1.3 and 1.54 μm) that are coincident with minima in the optical dispersion and the loss of silica-based glass fibers utilized in telecommunications, combined with the prospect of integration with semiconductor device technology, has sparked considerable interest.The status and prospects of obtaining stimulated emission in Si:Er are reviewed by Gregorkiewicz and Langer in this issue and by Coffa et al. in a previous MRS Bulletin issue. While great progress is being made in enhancing the emission intensity of Er-doped Si, it still experiences significant loss in luminescence efficiency at room temperature, as compared with low temperatures. This thermal quenching was shown by Favennec et al. to de crease with the bandgap energy of the semiconductor. Hence wide-bandgap semiconductors (WBGSs) are attractive candidates for investigation as hosts for RE doping.

Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

Abstract: Visible light emission has been obtained from Er-doped GaN thin films. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources (for Ga, Al, and Er) and a plasma gas source for N2. Above GaN band-gap photoexcitation resulted in strong green emission. The emission spectrum consists of two narrow green lines at 537 and 558 nm and a broad peak at light blue wavelengths (480–510 nm). The narrow lines have been identified as Er transitions from the 2H11/2 and 4S3/2 levels to the 4I15/2 ground state. The intensity of the 558 nm emission decreases with increasing temperature, while the intensity of the 537 nm line actually peaks at ∼300 K. This effect is explained based on the thermalization of electrons between the two closely spaced energy levels.