H. Pérez Ladrón de Guevara

Bio: H. Pérez Ladrón de Guevara is an academic researcher from University of Guadalajara. The author has contributed to research in topics: Phonon & Raman spectroscopy. The author has an hindex of 5, co-authored 17 publications receiving 234 citations. Previous affiliations of H. Pérez Ladrón de Guevara include Universidad Autónoma de San Luis Potosí.

Determination of the optical energy gap of Ge1−xSnx alloys with 0<x<0.14

Abstract: The optical energy gap of Ge1−xSnx alloys has been determined from transmittance measurements, using a fast-Fourier-transform infrared interferometer. Our results show that the change from indirect to direct band gap occurs at a lower critical Sn concentration (xc) than the value predicted from the virtual crystal approximation, tight binding, and pseudopotential models. However, a close agreement between the experimental results and the predictions with deformation potential theory is observed. The concentration xc, which is theoretically expected to be 0.09, actually it is observed to lie between 0.10

Ge1-xSnx alloys pseudomorphically grown on Ge(001)

Abstract: Ge1−xSnx alloys were grown on Ge(001) substrates in a conventional rf sputtering system. We determined the in-plane and in-growth lattice parameters, as well as the alloy bulk lattice parameter of the alloys for different Sn concentrations by high resolution x-ray diffraction. The Sn concentration was determined assuming Vegard’s law for the alloy lattice parameter. At low concentrations, we observed that Ge1−xSnx layers have pseudomorphic characteristics for layer thickness from 320 to 680 nm. These characteristics of Ge1−xSnx layers agree with the People and Bean critical thickness model. This structural study opens the possibility of growing dislocation-free Ge1−xSnx alloys below the critical thickness.

Nonlinear behavior of the energy gap in Ge1−xSnx alloys at 4K

Abstract: The optical energy gap of Ge1−xSnx alloys (x⩽0.14) grown on Ge substrates has been determined by performing transmittance measurements at 4K using a fast fourier transform infrared interferometer. The direct energy gap transitions in Ge1−xSnx alloys behave following a nonlinear dependence on the Sn concentration, expressed by a quadratic equation, with a so called bowing parameter b0 that describes the deviation from a simple linear dependence. Our observations resulted in b0RT=2.30±0.10eV and b04K=2.84±0.15eV, at room temperature and 4K, respectively. The validity of our fit is limited for Sn concentrations lower than 15%.

Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

Abstract: The ${E}_{0}$, ${E}_{0}+{\ensuremath{\Delta}}_{0}$, ${E}_{1}$, ${E}_{1}+{\ensuremath{\Delta}}_{1}$, ${E}_{0}^{\ensuremath{'}}$, and ${E}_{2}$ optical transitions have been measured in ${\mathrm{Ge}}_{1\ensuremath{-}y}{\mathrm{Sn}}_{y}$ alloys $(yl0.2)$ using spectroscopic ellipsometry and photoreflectance. The results indicate a strong nonlinearity (bowing) in the compositional dependence of these quantities. Such behavior is not predicted by electronic structure calculations within the virtual crystal approximation. The bowing parameters for ${\mathrm{Ge}}_{1\ensuremath{-}y}{\mathrm{Sn}}_{y}$ alloys show an intriguing correlation with the corresponding bowing parameters in the ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Si}}_{x}$ system, suggesting a scaling behavior for the electronic properties that is the analog of the scaling behavior found earlier for the vibrational properties. A direct consequence of this scaling behavior is a significant reduction (relative to prior theoretical estimates within the virtual crystal approximation) of the concentration ${y}_{c}$ for a crossover from an indirect- to a direct-gap system.

Visible light activity of rare earth metal doped (Er3+, Yb3+ or Er3+/Yb3+) titania photocatalysts

Abstract: A series of Er3+-TiO2, Yb3+-TiO2 and Er3+/Yb3+-TiO2 photocatalysts were obtained via sol–gel method, using lanthanides precursor ranging from 0.25 to 10 mol%. The experiments demonstrated that phenol in aqueous solutions was successfully degraded under visible light (λ > 450 nm) using Er/Yb-TiO2. The as-prepared samples were characterized by X-ray diffraction (XRD), X-ray photoelectron emission spectroscopy (XPS), UV–vis absorption measurement, BET surface area analysis and luminescent spectroscopy. XPS analysis revealed that erbium and ytterbium were present in the form of oxides. The sample showing the highest photoactivity was in the form of anatase, its surface area equalled to 125 m2/g, average crystals size was 13 nm, and it was prepared introducing 1 mol% of Yb3+ into reaction medium. 3 h of irradiation resulted in 89% of phenol degradation under visible light. Action spectra analysis performed for the selected Er/Yb-TiO2 samples, revealed that irradiation from 420 to 475 nm is responsible for visible light photoactivity.

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

Abstract: We synthesized up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1−yAs buffer layers using molecular beam epitaxy. The buffer layers enable engineered control of strain in the Ge1−xSnx layers to reduce strain-related defects and precipitation. Samples grown under similar conditions show a monotonic increase in the integrated photoluminescence (PL) intensity as the Sn composition is increased, indicating changes in the bandstructure favorable for optoelectronics. We account for bandgap changes from strain and composition to determine a direct bandgap bowing parameter of b = 2.1 ± 0.1. According to our models, these are the first Ge1−xSnx samples that are both direct-bandgap and exhibit PL.

TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

Abstract: ▪ Abstract New classes of Sn-containing group IV semiconductors are described. Novel CVD routes lead to growth of a broad range of Ge1−ySny alloys and compounds directly on Si substrates. The direct bandgap (E0) and optical transitions E0+Δ0, E1, E1+Δ1, E0′, and E2 of Ge1−ySny exhibit strong nonlinearities in the compositional dependence, and their bowing parameters correlate with those in Ge1 −xSix, suggesting a scaling behavior for the electronic properties. The Ge1−ySny films can be used as “virtual substrates” for the subsequent growth of Ge1−x−ySixSny ternaries. These are created for the first time and exhibit unprecedented thermal stability, superior crystallinity and unique optical and strain properties such as adjustable bandgaps, and controllable strain states (compressive, relaxed, and tensile). The synthesis of Ge1−x−ySixSny makes it possible to decouple strain and bandgap and adds new levels of flexibility to the design of group IV devices. The Ge-Si-Sn system also represents a new class of “d...

Band structure calculations of Si Ge Sn alloys: achieving direct band gap materials

Abstract: Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research attention as possible direct band gap semiconductors with prospective applications in optoelectronics. The direct gap property may be brought about by the alloy composition alone or combined with the influence of strain, when an alloy layer is grown on a virtual substrate of different compositions. In search for direct gap materials, the electronic structure of relaxed or strained Ge1−xSnx and Si1−xSnx alloys, and of strained Ge grown on relaxed Ge1−x−ySixSny, was calculated by the self-consistent pseudo-potential plane wave method, within the mixed-atom supercell model of alloys, which was found to offer a much better accuracy than the virtual crystal approximation. Expressions are given for the direct and indirect band gaps in relaxed Ge1−xSnx, strained Ge grown on relaxed SixGe1−x−ySny and strained Ge1−xSnx grown on a relaxed Ge1−ySny substrate, and these constitute the criteria for achieving a (finite) direct band gap semiconductor. Roughly speaking, good-size (up to ~0.5 eV) direct gap materials are achievable by subjecting Ge or Ge1−xSnx alloy layers to an intermediately large tensile strain, but not excessive because this would result in a small or zero direct gap (detailed criteria are given in the text). Unstrained Ge1−xSnx bulk becomes a direct gap material for Sn content of >17%, but offers only smaller values of the direct gap, typically ≤0.2 eV. On the other hand, relaxed SnxSi1−x alloys do not show a finite direct band gap.