H
H. Satake
Researcher at Toshiba
Publications - 1
Citations - 274
H. Satake is an academic researcher from Toshiba. The author has contributed to research in topics: Electron mobility & MOSFET. The author has an hindex of 1, co-authored 1 publications receiving 269 citations.
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Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
TL;DR: In this article, a SiGe-on-insulator (strained-SOI) structure fabricated by separation-by-implanted-oxygen (SIMOX) technology is presented, and electron and hole mobility characteristics have been experimentally studied and compared to those of control SOI MOSFET's.