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Haiqiao Ni

Researcher at Chinese Academy of Sciences

Publications -  163
Citations -  1603

Haiqiao Ni is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Quantum dot & Molecular beam epitaxy. The author has an hindex of 19, co-authored 145 publications receiving 1250 citations. Previous affiliations of Haiqiao Ni include University of Science and Technology of China.

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Low-threshold topological nanolasers based on the second-order corner state.

TL;DR: Xu et al. as mentioned in this paper developed a topological laser made from a two-dimensional photonic crystal nanocavity slab with a lasing threshold of about one micro-watt and high spontaneous emission coupling factor of 0.25.
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Low-threshold topological nanolasers based on second-order corner state.

TL;DR: A team of Chinese researchers have developed a topological laser made from a two-dimensional photonic crystal nanocavity slab with a lasing threshold of about one micro-watt and high spontaneous emission coupling factor of 0.25, which is comparable to the performance of conventional semiconductor lasers.
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Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

TL;DR: In this article, the authors demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated.
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Complex quantum ring structures formed by droplet epitaxy

TL;DR: In this article, a well-defined complex quantum ring structures formed by droplet epitaxy are demonstrated. But the growth mechanism of these quantum ring complexes is not addressed in this paper.
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Cavity Quantum Electrodynamics with Second‐Order Topological Corner State

TL;DR: In this article, a topological photonic crystal cavity is designed and fabricated into GaAs slabs with quantum dots embedded, and the enhancement of photoluminescence intensity and emission rate are both observed when the quantum dot is on resonance with the corner state.