H
Hajime Asahi
Researcher at University of Tokyo
Publications - 3
Citations - 91
Hajime Asahi is an academic researcher from University of Tokyo. The author has contributed to research in topics: Grain boundary & Bismuth. The author has an hindex of 3, co-authored 3 publications receiving 89 citations.
Papers
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Journal ArticleDOI
Quantum size effect in thin bismuth films
TL;DR: In this paper, the dependence of the resistivity ρ magnetoresistance Δρ/ρ and Hall coefficient RH of thin Bi films (thickness d: 700-2000 A) on thickness and temperature was studied.
Journal ArticleDOI
Structure and electrical properties of thin bismuth films
TL;DR: In this paper, the authors measured the resistivity of thin Bi films on silicon and compared the result of a numerical calculation based on the equation which was proposed by Mayadas and Shatzkes.
Journal ArticleDOI
Size effect in the electrical properties of thin epitaxial bismuth films
Hajime Asahi,Akira Kinbara +1 more
TL;DR: The thickness dependence of the electrical properties of thin epitaxial bismuth films (of thickness 2-3 μm) was studied at 42 and 77 K in this article.