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Halina Chudzynska

Bio: Halina Chudzynska is an academic researcher from University of London. The author has contributed to research in topics: Crystal structure & Trimethylsilyl. The author has an hindex of 4, co-authored 6 publications receiving 184 citations.

Papers
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TL;DR: In this article, the monomeric compounds [MCl{N(SiMe3)2}3]-M = Ti, Zr, or Hf have been prepared by the reaction of MCl4 with excess of Li[NSiMe 3]2].
Abstract: The monomeric compounds [MCl{N(SiMe3)2}3](M = Ti, Zr, or Hf) have been prepared by the reaction of MCl4 with excess of Li[N(SiMe3)2]. Mass and i.r. spectra have been obtained, together with variable-temperature 1H n.m.r. spectra which shows evidence of fluxional behaviour of the bulky ligands. Molecular structures have been determined by single-crystal X-ray diffraction for the whole series. The three compounds are isostructural in space group R3c with lattice parameters (hexagonal setting)a=b= 18.076, 18.317, 18.304 and c= 17.208, 17.078, and 17.085 A respectively for Ti, Zr, and Hf. Structure analysis by the heavy-atom method and refinement by full-matrix least-squares has given R values of 0.048, 0.029, and 0.053 based on 577, 1 182, and 1 195 unique data for Ti, Zr, and Hf respectively. The structural and spectroscopic results are discussed in terms of steric effects and the nature of the metal–ligand bonding.

49 citations

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TL;DR: The following adducts of Group III trialkyls with phosphines have been prepared, either by direct reaction in hydrocarbon solution or by displacement of ether from the metal Trialkyl etherate: Me3M·PPh3 (M = Ga, In); Me3In·P(2-MeC6H4)3; (R3M)2·(Ph2PCH2)2 (R

48 citations

Journal ArticleDOI
TL;DR: In this article, an indium phoshide epitaxial layers with background carrier concentrations as low as 2.6 × 10 14 cm −3 and 77 K electron mobilities as high as 126,300 cm 2 V −1 s −1 have been grown by atmospheric pressure metalorganic vapour phase epitaxy, using trimethylindium and phosphine.

48 citations

Journal ArticleDOI
TL;DR: The X-ray crystal structure of (InOPri)5(µ2-OPRI)4( µ3-OPri )4(´5-O) reveals a square-pyramidal arrangement of indium atoms about a central oxygen; five of the alkoxo groups are terminal, four are µ2 about the basal metals, and four are 1 µ3 about the triangular faces of the pyramid; the geometry about each metal is highly distorted octahedral.
Abstract: The X-ray crystal structure of (InOPri)5(µ2-OPri)4(µ3-OPri)4(µ5-O) reveals a square-pyramidal arrangement of indium atoms about a central oxygen; five of the alkoxo groups are terminal, four are µ2 about the basal metals, and four are µ3 about the triangular faces of the pyramid; the geometry about each metal is highly distorted octahedral.

38 citations


Cited by
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TL;DR: The formation of amorphous metal oxide semiconducting thin-films using a ‘sol–gel on chip’ hydrolysis approach from soluble metal alkoxide precursors affords unprecedented high field-effect mobilities, reproducible and stable turn-on voltages Von≈0 V and high operational stability at maximum process temperatures as low as 230 °C.
Abstract: A low-temperature, solution-based preparation of amorphous, metal oxide semiconducting thin-films is reported. This ‘sol–gel on chip’ hydrolysis approach yields thin-film transistors with high field-effect mobilities, reproducible and stable turn-on voltages and high operational stability.

895 citations

Journal ArticleDOI
Arne Haaland1
TL;DR: The difference between the covalent and the dative bond becomes apparent only after the orbital coefficients have been analyzed as discussed by the authors, which may explain why many structural chemists seem reluctant to distinguish between the two types of bonds.
Abstract: Textbooks of inorganic chemistry describe the formation of adducts by coordination of an electron donor to an electron acceptor, often using the amine-boranes, X3N → BY3, as examples. In the Lewis (electron dot) formulas of the compounds, the dative bond in H3N → BH3 and the covalent bond in H3CCH3 are both represented by a shared electron pair. In the simple molecular orbital or valence bond models the wave functions of both electron pairs would be constructed in the same manner from the appropriate sp3 type atomic orbitals on the bonded atoms; the difference between the covalent and the dative bond becomes apparent only after the orbital coefficients have been analyzed. This may be the reason why many structural chemists seem reluctant to distinguish between the two types of bonds. The object of this article is to remind the reader that the physiocochemical properties of covalent and dative bonds may be – and often are – quite different, and to show that a distinction between the two provides a basis for understanding the structures of a wide range of main group metal compounds.

490 citations

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TL;DR: Although reactions such as oxirane and lactide polymerizations are fairly well-known now with five- and six-coordinate aluminum compounds, the potential of these compounds has only begun to be developed.
Abstract: In a previous review it was predicted that "the reactivity of five-coordinate complexes would certainly be different than that of the four-coordinate derivatives". Structurally and spectroscopically, there is very little difference in the higher-coordinate compounds when compared to the four-coordinate derivatives. However, the prediction was remarkably accurate, if not a bit understated, for the reactivity of these compounds. There appears to be a tremendous potential in catalysis and synthesis for the five-coordinate derivatives, far more possibilities than exist for the lower-coordinate derivatives. Furthermore, the higher-coordinate derivatives are rarely air or moisture sensitive and, thus, may be handled under a wider range of conditions. Although reactions such as oxirane and lactide polymerizations are fairly well-known now with five- and six-coordinate aluminum compounds, the potential of these compounds has only begun to be developed. It is easy to imagine that these types of compounds will see wider use than the related transition-metal compounds.

384 citations

Journal ArticleDOI
TL;DR: This critical review focuses on the solution deposition of transparent conductors with a particular focus on transparent conducting oxide (TCO) thin-films, with an introduction into the applications of and material criteria for TCOs.
Abstract: This critical review focuses on the solution deposition of transparent conductors with a particular focus on transparent conducting oxide (TCO) thin-films TCOs play a critical role in many current and emerging opto-electronic devices due to their unique combination of electronic conductivity and transparency in the visible region of the spectrum Atmospheric-pressure solution processing is an attractive alternative to conventional vacuum-based deposition methods due to its ease of fabrication, scalability, and potential to lower device manufacturing costs An introduction into the applications of and material criteria for TCOs will be presented first, followed by a discussion of solution routes to these systems Recent studies in the field will be reviewed according to their materials system Finally, the challenges and opportunities for further enabling research will be discussed in terms of emerging oxide systems and non-oxide based transparent conductors (341 references)

347 citations