H
Han Woong Yoo
Researcher at Vienna University of Technology
Publications - 56
Citations - 590
Han Woong Yoo is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Non-volatile memory & Reading (computer). The author has an hindex of 11, co-authored 53 publications receiving 477 citations. Previous affiliations of Han Woong Yoo include Delft University of Technology & Samsung.
Papers
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Journal ArticleDOI
MEMS-based lidar for autonomous driving
Han Woong Yoo,Norbert Druml,David Brunner,Christian Schwarzl,Thomas Thurner,Marcus Hennecke,Georg Schitter +6 more
TL;DR: A test bench for the characterization and performance evaluation of MEMS mirror is introduced and a recently developed MEMS-based lidar will be evaluated by various levels of tests including field tests based on realistic scenarios, aiming for safe and reliable autonomous driving in future automotive industry.
Journal ArticleDOI
High speed laser scanning microscopy by iterative learning control of a galvanometer scanner
TL;DR: Experimental results verify the benefits of ILC of its wide control bandwidth, enabling a faster, more linear, and more accurate scanning without a phase lag and a gain mismatch.
Patent
Access method of non-volatile memory device
TL;DR: In this paper, the authors propose an access method of a nonvolatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the threshold voltage variations being capable of physically affecting a second memory cell; and assigning the second memory cells to a selected sub-distribution from among a plurality of subdistributions according to a distance of the voltage variation.
Journal ArticleDOI
Receding Horizon Controls for Input-Delayed Systems
TL;DR: It is shown through simulation that the proposed RHC stabilizes the input-delayed system effectively and its performance can be tuned by adjusting weighting matrices with respect to the state and the input.
Patent
Method analyzing threshold voltage distribution in nonvolatile memory
TL;DR: In this paper, a distribution analysis method for nonvolatile memory devices with overlapping first and second threshold voltage distributions is proposed, detecting a degree of overlap between the two distributions by reading data stored in the memory cells and determining read index data from the read data.