scispace - formally typeset
Search or ask a question
Author

Hans Norström

Other affiliations: Ericsson, Infineon Technologies
Bio: Hans Norström is an academic researcher from Uppsala University. The author has contributed to research in topics: Silicon & Sputtering. The author has an hindex of 16, co-authored 77 publications receiving 822 citations. Previous affiliations of Hans Norström include Ericsson & Infineon Technologies.


Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, the usefulness of Ti/TiN and Zr/ZrN bilayers as low resistivity contacts and diffusion barriers between doped silicon and aluminium was examined.

94 citations

Journal ArticleDOI
TL;DR: In this article, the properties of films produced by cracking various hydrocarbon gases in an r.f. glow discharge were studied and it was shown that the production rates for the films increased with the molecular weight for gases having the same structural form, e.g. C4H10 had a higher coating rate than CH4 under the same plasma conditions.

67 citations

Patent
29 Apr 2002
TL;DR: In this paper, an IC fabrication method consisting of providing a substrate (10, 41), forming an active region (41) for a bipolar transistor and a MOS device in the substrate, forming isolation areas (81) around, in a horizontal plane, the active regions, forming a gate region (111, 112) on the active region for the bipolar transistor, and forming a layer (141) of an insulating material on the MOS gate region and on the transistor for the transistor.
Abstract: The present invention refers to an IC fabrication method comprising: providing a substrate (10, 41); forming an active region (41) for a bipolar transistor and an active region (41) for a MOS device in the substrate (10); forming isolation areas (81) around, in a horizontal plane, the active regions; forming a MOS gate region (111, 112) on the active region for the MOS device; forming a layer (141) of an insulating material on the MOS gate region and on the active region (31) for the transistor; and defining a base region in the active region for the transistor by producing an opening (143) in the insulating layer (141) such that the remaining portions of the insulating layer (141) partly cover the active region for the bipolar transistor. The insulating layer (141) remains on the MOS gate region to encapsulate and protect the MOS gate region during subsequent manufacturing steps.

55 citations

Patent
18 Mar 1998
TL;DR: In this article, a hole is filled with electrically conducting material and extends from the surface of the device to the bottom diffusion (103), so that the electrical conducting material in the hole is in contact therewith.
Abstract: In order to produce an electrical connection to an inner layer such as a bottom diffusion (103), which has a good electrical conductivity and is located inside a bipolar semiconductor device isolated by trenches (119) and which for example forms a subcollector of a NPN-transistor, a hole (157) in a trench is used. The hole is filled with electrically conducting material and extends from the surface of the device to the bottom diffusion (103), so that the electrically conducting material in the hole is in contact therewith. The hole (157) is made aligned with a sidewall of the trench (119) by using selective etching. The hole can be made at the same time as contact holes for metallization are made and then also be filled in the metallization step, to contact the bottom diffusion. For a lateral PNP-transistor the hole can be made as a closed groove constituting the outer confinement of the base area, passing all around the transistor. The outer sidewall of such a closed trench can, as seen from above, be bevelled by 45°, so that no inner corners having too small angles are found in the trench, what facilitates the filling with oxide.

36 citations

Journal ArticleDOI
TL;DR: Silicon carbide integrated circuits have been suggested for extreme environment operation as discussed by the authors. But the challenge of a new technology is to develop process flow, circuit models and circuit designs for extreme environments operation.
Abstract: Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for ...

32 citations


Cited by
More filters
Book
29 Apr 2010
TL;DR: Physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing is discussed in this paper.
Abstract: This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

783 citations

Journal ArticleDOI
TL;DR: The field of plasma etching is reviewed in this paper, where basic principles related to plasma etch such as evaporation rates and Langmuir-Hinshelwood adsorption are introduced.
Abstract: The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

539 citations

Journal ArticleDOI
01 Apr 2000-Vacuum
TL;DR: In this paper, a review of the thermal stability of state-of-the-art transition metal nitride thin films synthesized by physical vapour deposition techniques is presented, where the authors show that they are successfully applied as well.

535 citations

Journal ArticleDOI
TL;DR: In this article, the authors describe the deposition of amorphous hydrogenated hard carbon (a-C:H) thin films from benzene vapor in a rf plasma.
Abstract: The deposition of amorphous hydrogenated hard carbon (a–C:H) thin films from benzene vapor in a rf plasma is described. a–C:H was deposited on glass, quartz, Si, Ge, and GaAs. Negative self‐bias VB and gas pressure P are shown to be the two significant parameters for an accurate control of the deposition process. The dependence of growth rate and deposition temperature on VB and P was determined; this gives an empirical relation for the average energy E of the ions forming the thin films. Refractive index (1.85–2.20 in the IR), optical gap (0.8–1.8 eV) and density (1.5–1.8 g/cm3) of a–C:H was measured. The optical gap varies linearly with the content of bonded hydrogen in the films. The density of a–C:H is proportional to the average ion energy E. We demonstrate the application of a–C:H as antireflective coating on Ge for 10.6 μm (reflection <0.2% at 10.6 μm) and as terminating layer of an optical multilayer stack.

471 citations

Journal ArticleDOI
TL;DR: A diamond-like carbon (DLC) films combine several excellent properties like high hardness, low friction coefficients and chemical inertness as mentioned in this paper, and the importance for industrial applications became more and more evident.
Abstract: Diamond-like carbon (DLC) films combine several excellent properties like high hardness, low friction coefficients and chemical inertness. The DLC coating material can be further classified in two main groups, the hydrogenated amorphous carbon (a-C:H, ta-C:H) and the hydrogen free amorphous carbon (a-C, ta-C). By adding other elements like metals (a-C:H:Me) or non-metal elements like silicon, oxygen, fluorine or others (a-C:H:X), several modifications of the properties can be adjusted according to application requirements. First reports on hard amorphous carbon films were published in the 1950s and about 20 years later there began worldwide intensive research activities on DLC. In the following years the number of publications increased continuously and the importance for industrial applications became more and more evident. Several deposition techniques were applied to prepare a-C:H, ta-C, metal containing a-C:H:Me and non-metal containing a-C:H:X coatings. In parallel the structure and deposition mechanisms of DLC coatings were extensively studied. An essential obstacle for a broad industrial application was the high compressive stress level in a-C:H films causing delamination and limiting the film thicknesses. With metal based intermediate layer systems most adhesion problems could be solved satisfactorily and thus from the mid-1990s the pre-conditions for a broad application especially in the automotive industry were given. With modified a-C:H:X and a-C:X coatings a considerable friction reduction or surface energy adjustments could be achieved.

413 citations